METHODS FOR DEPOSITING NICKEL FILMS AND FOR MAKING NICKEL SILICIDE AND NICKEL GERMANIDE
First Claim
1. A method of depositing a nickel thin film on a substrate by multiple cycles of a vapor deposition process, each cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase nickel precursor and a second precursor, wherein in each cycle a layer of nickel precursor is formed on the substrate surface and the second reactant reacts with the nickel precursor to form a nickel thin film.
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Abstract
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
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Citations
31 Claims
- 1. A method of depositing a nickel thin film on a substrate by multiple cycles of a vapor deposition process, each cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase nickel precursor and a second precursor, wherein in each cycle a layer of nickel precursor is formed on the substrate surface and the second reactant reacts with the nickel precursor to form a nickel thin film.
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5. An atomic layer deposition-type process for forming an elemental Ni thin film on a substrate in a reaction chamber comprising multiple Ni deposition cycles, each deposition cycle comprising:
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providing a first vapor phase reactant pulse comprising a first Ni precursor into the reaction chamber to form a layer of the Ni precursor on the substrate; removing excess first reactant from the reaction chamber; providing a second vapor phase reactant pulse to the reaction chamber such that the second reactant reacts with the first Ni precursor on the substrate in a self-limiting manner to form Ni; and removing excess second reactant and reaction byproducts, if any, from the reaction chamber. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. An ALD-type process for depositing Ni thin films on a substrate in a reaction space comprising multiple Ni deposition cycles, each deposition cycle comprising:
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providing a first vapor phase reactant pulse comprising a first Ni precursor into the reaction space to form a layer of the Ni precursor on the substrate; removing excess first reactant from the reaction space; providing a second vapor phase reactant pulse to the reaction space, wherein the second reactant is an organic reducing agent; removing excess second reactant and reaction byproducts, if any, from the reaction space; and providing a third vapor phase reactant pulse to the reaction space, wherein the third reactant is hydrogen or forming gas; and removing excess third reactant and reaction byproducts, if any, from the reaction space. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for silicidation, comprising:
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providing a substrate having at least one exposed silicon region; depositing a nickel thin film over the exposed silicon region; and heating the substrate to form a nickel silicide film. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A method for forming a doped nickel silicide layer on a substrate, comprising:
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providing a substrate having at least one exposed silicon region; depositing a nickel film over the silicon region, wherein depositing the nickel film comprises multiple cycles of a primary nickel atomic layer deposition-type process; depositing a dopant film comprising a second metal over the silicon region, wherein depositing the dopant film comprises one or more cycles of a dopant atomic layer deposition-type process; and annealing the substrate to form a nickel silicide that is doped with the second metal, wherein the cycles of the primary nickel deposition process and the cycles of the dopant deposition process are carried out at a specific ratio to achieve a desired dopant concentration in the doped metal silicide layer. - View Dependent Claims (28, 29, 30, 31)
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Specification