UNIT PIXEL AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME

• US 20130119234A1
• Filed: 09/13/2012
• Published: 05/16/2013
• Est. Priority Date: 11/14/2011
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LEE, Yong-Jei, LEE, Tae-Yon, PARK, Yoon-Dong, FOSSUM, Eric R., JIN, Young-Gu
• Application Number:
  US13/615,424
• Publication Number:
  US 20130119234A1
• Time in Patent Office: Days
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/1808 including only Ge
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.

Claims

1. A unit pixel of a three-dimensional image sensor, comprising:

a non-silicon photodetector formed at a silicon substrate, the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light; and

at least one readout circuit formed at the silicon substrate, the at least one readout circuit outputting a sensing signal based on the photocharge, the sensing signal generating depth information on a distance to an object.

2. The unit pixel of claim 1, wherein the non-silicon photodetector is further formed on a doped region in the at least one readout circuit.

3. The unit pixel of claim 2, wherein the non-silicon photodetector is a photoconductor, which comprises intrinsic germanium.

4. The unit pixel of claim 2, wherein the non-silicon photodetector comprises N-type germanium and P-type germanium, and the non-silicon photodetector forms a PN junction diode.

5. The unit pixel of claim 2, wherein the doped region includes N-type silicon, the non-silicon photodetector comprises P-type germanium and intrinsic germanium, and the doped region and the non-silicon photodetector form a PIN junction diode.

6. The unit pixel of claim 1, wherein the non-silicon photodetector comprises at least one of germanium, silicon germanium compound, indium gallium arsenide, amorphous silicon germanium compound, black silicon germanium compound, porous silicon germanium compound, germanium antimony telluride, indium gallium antimonide, indium arsenide, mercury cadmium telluride, silicide, transition metal silicide, selenide, telluride, and sulfide.

7. The unit pixel of claim 1, wherein the non-silicon photodetector comprises photosensitive semiconductor quantum dots.

8. The unit pixel of claim 1, further comprising:

a buffer unit coupled between the non-silicon photodetector and the at least one readout circuit, the buffer unit configured to be turned on and off in response to a buffer control signal.

9. The unit pixel of claim 1, wherein the non-silicon photodetector comprises a first quantum efficiency with respect to infrared light and a second quantum efficiency with respect to visible light, the first quantum efficiency being higher than the second quantum efficiency.

10. The unit pixel of claim 1, wherein the non-silicon photodetector comprises a quantum efficiency with respect to infrared light that is higher than a quantum efficiency of a silicon photodetector.

11. The unit pixel of claim 1, wherein the non-silicon photodetector comprises a quantum efficiency with respect to light of a wavelength between 800 nm and 1100 nm that is higher than a quantum efficiency of a silicon photodetector.

12. The unit pixel of claim 1, wherein the non-silicon photodetector is formed at a recess in the silicon substrate, the recess being adjacent to the at least one readout circuit.

13. The unit pixel of claim 1, wherein the non-silicon photodetector is formed on the at least one readout circuit.

14. A three-dimensional image sensor comprising:

a light source module configured to generate modulated transmission light having periodically-varying intensity;

a pixel array comprising a plurality of unit pixels which convert incident light to electric signals, the incident light including the modulated transmission light reflected by an object; and

an image signal processor which generates depth information based on the electric signals,

wherein one of the plurality of unit pixels comprises;

a non-silicon photodetector formed at a silicon substrate, the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to the incident light; and

at least one readout circuit formed at the silicon substrate, the at least one readout circuit outputting a sensing signal based on the photocharge, the sensing signal corresponding to one of the electric signals.

15. The three-dimensional image sensor of claim 14, wherein the pixel array further comprises:

a plurality of color pixels formed at the silicon substrate between the unit pixels, the color pixels converting visible light to color image signals, the visible light included in the incident light, the color pixels comprising a quantum efficiency with respect to the visible light that is higher than a quantum efficiency of the unit pixels.

16. A unit pixel of a three-dimensional image sensor, comprising:

a non-silicon photodetector coupled to a first voltage through a conduction path, the non-silicon photodetector generating a photocharge in response to incident light; and

at least one readout circuit coupled to the non-silicon photodetector through the conduction path, the at least one readout circuit comprises a switching block, a readout block, and a first capacitor, and the at least one readout circuit outputs a sensing signal for generating depth information on a distance to an object, based on the photocharge.

17. The unit pixel of claim 16, wherein the non-silicon photodetector is formed at a silicon substrate.

18. The unit pixel of claim 16, wherein the non-silicon photodetector is formed on a doped region in the at least one readout circuit.

19. The unit pixel of claim 16, wherein the at least one readout circuit is formed at a silicon substrate.

20. The unit pixel of claim 16, wherein the non-silicon photodetector is formed at a recess in a silicon substrate, the recess being adjacent to the at least one readout circuit.

21. The unit pixel of claim 16, wherein the non-silicon photodetector is formed on the at least one readout circuit.

22. The unit pixel of claim 16, wherein a horizontal cross-section of the non-silicon photodetector is decreased gradually along a depth of the horizontal cross-section such that an upper surface of the non-silicon photodetector has a largest area and a bottom surface of the non-silicon photodetector has a smallest area.