QUANTUM BITS AND METHOD OF FORMING THE SAME
First Claim
1. A method of forming Josephson junction (JJ) quantum bits (qubit)s, the method comprising:
- forming a JJ trilayer on a substrate, the JJ trilayer being comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer;
performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor layer and the top superconductor material layer; and
etching openings in the JJ trilayer to form one or more JJ qubits.
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Abstract
Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.
41 Citations
20 Claims
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1. A method of forming Josephson junction (JJ) quantum bits (qubit)s, the method comprising:
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forming a JJ trilayer on a substrate, the JJ trilayer being comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer; performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor layer and the top superconductor material layer; and etching openings in the JJ trilayer to form one or more JJ qubits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming Josephson junction (JJ) quantum bits (qubits), the method comprising:
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depositing a first superconductor material layer over a substrate; forming a dielectric layer over the first superconductor material layer; depositing a second superconductor material layer over the dielectric layer, the first superconductor material layer, the dielectric layer and the second superconductor material layer forming a JJ trilayer; annealing the JJ trilayer in an inert environment at a temperature between about 150°
C. to about 400°
C. for a time period between about 15 minute to about 120 minutes to control diffusion of the dielectric layer into the first superconductor material layer and the second superconductor material layer; andetching openings in the JJ trilayer to form one or more JJ qubits. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A plurality of Josephson junction (JJ) quantum bit (qubits) arranged on a substrate, each of the plurality of qubits comprising:
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a dielectric layer; a superconductor base layer portion underlying the dielectric layer and having a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction; and a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits. - View Dependent Claims (18, 19, 20)
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Specification