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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20130119376A1
  • Filed: 11/01/2012
  • Published: 05/16/2013
  • Est. Priority Date: 11/11/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a source electrode layer and a drain electrode layer over an insulating surface;

    forming an oxide semiconductor layer in a gap between the source electrode layer and the drain electrode layer by a coating method;

    forming a gate insulating layer in contact with a top surface of the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;

    forming a gate electrode layer in a region overlapping with the oxide semiconductor layer with the gate insulating layer interposed therebetween;

    introducing an impurity element into the oxide semiconductor layer with the gate electrode layer used as a mask, thereby forming in the oxide semiconductor layer a pair of impurity regions and a channel region sandwiched between the pair of impurity regions;

    forming a conductive film covering the gate electrode layer;

    forming an insulating layer over the conductive film;

    processing the insulating layer, thereby forming a first sidewall insulating layer and a second sidewall insulating layer provided on a side surface of the gate electrode layer in a channel length direction with the conductive film interposed therebetween; and

    etching the conductive film with the first sidewall insulating layer and the second sidewall insulating layer used as a mask, thereby forming a first conductive layer and a second conductive layer in contact with the side surface of the gate electrode layer in the channel length direction.

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