SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a pair of electrodes over an insulating surface;
an oxide semiconductor film over and in contact with the pair of electrodes;
a gate electrode over the insulating surface; and
a gate insulating film adjacent to the gate electrode and the oxide semiconductor film,wherein the pair of electrodes comprises a region in contact with the oxide semiconductor film, andwherein halogen is included at least in the region.
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Accused Products
Abstract
By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.
7 Citations
19 Claims
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1. A semiconductor device comprising:
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a pair of electrodes over an insulating surface; an oxide semiconductor film over and in contact with the pair of electrodes; a gate electrode over the insulating surface; and a gate insulating film adjacent to the gate electrode and the oxide semiconductor film, wherein the pair of electrodes comprises a region in contact with the oxide semiconductor film, and wherein halogen is included at least in the region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device comprising the steps of:
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forming a pair of electrodes over an insulating surface; performing a halogenation treatment on the pair of electrodes; forming an oxide semiconductor film over and in contact with the pair of electrodes after the halogenation treatment; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over an insulating surface; forming a gate insulating film over the gate electrode; forming a pair of electrodes over the gate insulating film; performing a halogenation treatment on the pair of electrodes; and forming an oxide semiconductor film over and in contact with the pair of electrodes after the halogenation treatment. - View Dependent Claims (18, 19)
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Specification