SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS AND DISPLAY ELEMENT
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Accused Products
Abstract
A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.
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Citations
33 Claims
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1-28. -28. (canceled)
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29. A semiconductor light emitting device comprising:
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a base substrate; a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, the first conductive layer being disposed on a main surfaces of the base substrate in such a manner to be positioned closer to the base substrate than the second conductive layer is, and the second conductive layer having an uneven surface which faces away from the light emitting layer so as to improve light extraction efficiency; a first electrode that is electrically connected to the first conductive layer; a second electrode that is electrically connected to the second conductive layer; and a phosphor film that covers the uneven surface. - View Dependent Claims (30, 31, 32, 33)
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Specification