Miniaturized Electrical Component Comprising an MEMS and an ASIC and Production Method

• US 20130119492A1
• Filed: 01/24/2011
• Published: 05/16/2013
• Est. Priority Date: 01/29/2010
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: Epcos AG (TDK Corporation)
• Inventors: Feiertag, Gregor, Krueger, Hans, Pahl, Wolfgang, Leidl, Anton
• Granted Patent: US 9,056,760 B2
• Time in Patent Office: Days
• US Class Current: 257/416
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 7/0061 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00309 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/1329 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/133 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/27438 the preform being at least partly pre-patterned
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29013 being rectangular or square
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8185 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/10 : characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/163 : Connection portion, e.g. seal
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H04R 19/04 : Microphones H04R19/01 takes precedence

Abstract

The invention relates to a miniaturized electrical component comprising an MEMS chip and an ASIC chip. The MEMS chip and the ASIC chip are disposed on top of each other; an internal mounting of MEMS chip and ASIC chip is connected to external electrical terminals of the electrical component by means of vias through the MEMS chip or the ASIC chip.

Claims

1. An MEMS sensor component, comprising

an MEMS chip having an electrical contact

an ASIC chip having an electrical contact

an internal interconnection of MEMS chip and ASIC chip, and

a plated-through hole through the MEMS chip or through the ASIC chip,

wherein

the MEMS chip and the ASIC chip are arranged one above another,

the internal interconnection comprises a direct interconnection of the electrical contact of the MEMS chip with the electrical contact of the ASIC chip,

the internal interconnection or at least one of the electrical contacts of the chips is interconnected via the plated-through hole with an external electrical terminal of the component which is arranged on that side of the ASIC chip which faces away from the MEMS chip or on that side of the MEMS chip which faces away from the ASIC chip,

a gap is arranged between the MEMS chip and the ASIC chip,

a frame which acoustically seals the interior of the MEMS sensor component in a lateral direction is arranged in the gap,

the MEMS chip comprises a sensor electrode, and

a sensor opening is arranged in the ASIC chip or laterally between MEMS chip and ASIC chip.

2. The component according to claim 1, wherein

the MEMS chip has an underside and the ASIC chip has a top side and an underside,

the top side of the ASIC chip faces the underside of the MEMS chip,

the plated-through hole runs through the ASIC chip, and

the external electrical terminal is arranged on the underside of the ASIC chip.

3. The component according to claim 1, wherein

the ASIC chip has an underside and the MEMS chip has a top side and an underside,

the top side of the MEMS chip faces the underside of the ASIC chip,

the plated-through hole runs through the MEMS chip, and

the external electrical terminal is arranged on the underside of the MEMS chip.

4. The component according to claim 1, wherein the substrate of the MEMS chip or of the ASIC chip comprises silicon.

5. The component according to claim 1, wherein the electrical contact of the MEMS chip is soldered to, adhesively bonded to by an electrically conductive adhesive, interconnected with by means of a bonding connection, or welded together with, the electrical contact of the ASIC chip.

6. The component according to claim 1, wherein

the component is arranged on the top side of a mounting plate with an electrical terminal, and

the external electrical terminal is interconnected with the electrical terminal of the mounting plate.

7. The component according to claim 1, wherein

the MEMS chip comprises a cavity, a movable membrane, a counterelectrode and an opening to the cavity,

the movable membrane is arranged parallel to the counterelectrode and forms with the latter a capacitive element, and

the ASIC chip comprises a circuit for determining the capacitance or for determining capacitance changes of the capacitive element.

8. The component according to claim 1,

wherein the MEMS chip has component structures for determining air pressure, moisture or gas composition, and

wherein the component structures are in contact with the atmosphere surrounding the component.

9. The component according to claim 1, wherein at least two of MEMS chip, ASIC chip and frame terminate flush in a lateral direction.

10. The component according to claim 1, wherein the MEMS chip is embodied as a microphone,

the MEMS chip comprises a fixed electrode as counterelectrode and a membrane.

11. A method for producing an MEMS sensor component, comprising the steps of:

providing an ASIC chip having an electrical contact and an MEMS chip having an electrical contact,

producing a plated-through hole through the MEMS chip or through the ASIC chip,

arranging the ASIC chip and the MEMS chip one above another,

connecting ASIC chip and MEMS chip,

interconnecting the electrical contacts of the ASIC chip and of the MEMS chip,

wherein a sensor opening towards the outside is provided in the ASIC chip or between ASIC chip and MEMS chip.

12. The method according to claim 11, wherein the ASIC chip and/or the MEMS chip are made available in a multiple panel on a wafer.

13. The method according to claim 12, wherein the ASIC chip and the MEMS chip are in each case made available in multiple panels on a respective wafer, and the wafers are joined together such that a respective ASIC chip is connected to and interconnected with a respective MEMS chip.

14. The method according to claim 13, wherein a frame is arranged between ASIC chip and MEMS chip, which frame terminates with a respective surface of ASIC chip and MEMS chip, such that a respective cavity sealed off apart from the sensor opening is enclosed between ASIC chip, MEMS chip and frame.