COMPOSITE SUBSTRATE, ELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
First Claim
1. A composite substrate, comprising:
- a support substrate having electric insulating properties; and
a silicon substrate disposed on the support substrate, the silicon substrate comprising a plurality of first regions and a second region positioned between the plurality of first regions,an oxidized portion containing silicon oxide as a main component, the oxidized portion being disposed on a main surface of the second region closer to the support substrate side.
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Accused Products
Abstract
Provided are a composite substrate which includes a silicon substrate having improved crystallinity, a method for manufacturing a composite substrate, and a method for manufacturing an electronic component. A composite substrate is formed by bonding a semiconductor substrate onto a support substrate having electric insulating properties. The semiconductor substrate is formed of silicon. The semiconductor substrate includes a plurality of first regions on each of which an element portion which functions as a semiconductor device is formed, and a second region which is positioned between the plurality of first regions. In the semiconductor substrate, an oxidized portion which is composed of silicon oxide is formed on a bottom surface of the second region.
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Citations
18 Claims
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1. A composite substrate, comprising:
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a support substrate having electric insulating properties; and a silicon substrate disposed on the support substrate, the silicon substrate comprising a plurality of first regions and a second region positioned between the plurality of first regions, an oxidized portion containing silicon oxide as a main component, the oxidized portion being disposed on a main surface of the second region closer to the support substrate side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 14, 15)
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9. A method for manufacturing a composite substrate, comprising:
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an oxidized portion forming step of providing an oxidized portion containing silicon oxide as a main component, on a surface of a second region in a silicon substrate comprising a plurality of first regions and the second region positioned between the plurality of first regions; and a bonding step of bonding the oxidized portion of the silicon substrate to a support substrate having electric insulating properties. - View Dependent Claims (10, 11, 12, 13)
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16. An electronic component, comprising:
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a support chip having electric insulating properties; and a silicon chip disposed on the support chip, wherein the silicon chip comprises a first region on which an element portion which functions as a semiconductor device is formed, and a second region which is disposed surrounding the first region, an oxidized portion containing silicon oxide as a main component which is disposed on a main surface of the second region closer to the support chip side. - View Dependent Claims (17, 18)
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Specification