MEMS DEVICE AND MANUFACTURING METHOD THEREOF

• US 20130119822A1
• Filed: 12/13/2010
• Published: 05/16/2013
• Est. Priority Date: 06/11/2010
• Status: Abandoned Application

• Current Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
• Original Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
• Inventors: Mao, Jianhong, Han, Fengqin, Tang, Deming
• Application Number:
  US13/703,529
• Publication Number:
  US 20130119822A1
• Time in Patent Office: Days
• US Class Current: 310/300
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: H02N 1/006 of the gap-closing type H02N1/004 takes precedence

Abstract

A Micro-Electro-Mechanical System (MEMS) device and its manufacturing method are provided. Said device comprises a MEMS component and said component comprises a main body (10) and a movable electrode (20). Said main body (10) contains a fixed electrode (110) and a cavity (30) and is covered by a first dielectric layer (400) which seals said cavity (30) into an enclosure. Said movable electrode (20) is connected with said main body (10) flexibly by a fixing piece and overhangs in said enclosure. Vias (405) are formed in said first dielectric layer (400) and filled with a second dielectric layer (500). The patent enables effective packaging for a MEMS device.

Claims

1. An MEMS apparatus including an MEMS device comprising:

a main body containing a fixed electrode; and

a movable electrode movably connected with the main body through a fixer and movable relative to the fixed electrode;

wherein the main body defines a trench therein, the movable electrode being suspended in the trench, a first dielectric layer being located on the main body and above the trench and covering the trench for forming a sealed cavity, the movable electrode being suspended inside the sealed cavity through the fixer, holes being defined through the first dielectric layer and filled with a second dielectric layer.

2. The MEMS apparatus as claimed in claim 1, wherein the main body includes a substrate, a first insulation layer located on the substrate, and a second insulation layer located on the first insulation layer, the trench extends through the first insulation layer and the second insulation layer.

3. The MEMS apparatus as claimed in claim 1, wherein the movable electrode is formed of a material selected from Al, Ti, Cu, Co, Ni, Ta, Pt, Ag, Au or any combination thereof.

4. The MEMS apparatus as claimed in claim 1, wherein the first dielectric layer, the second dielectric layer, the first insulation layer and the second insulation layer are formed of a material selected from silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, carbon doped silicon oxynitride or any combination thereof.

5. The MEMS apparatus as claimed in claim 1, wherein the holes in the first dielectric layer are arranged in a grid pattern.

6. The MEMS apparatus as claimed in claim 5, wherein the second dielectric layer is formed of SiO2, the holes in the first dielectric layer have an aperture of 0.2 μ

m˜

1 μ

m and a depth-to-width ratio of 0.3˜

0.5.

7. A manufacturing method of an MEMS apparatus comprising:

providing an MEMS device including a main body and a movable electrode, wherein the main body defines a trench therein, a first sacrificial layer is located on the bottom of the trench, the movable electrode is located on the first sacrificial layer and movably connected with the main body through a fixer;

forming a second sacrificial layer in the trench, the second sacrificial layer covering the movable electrode;

forming a first dielectric layer on the second sacrificial layer and on the main body, wherein holes are defined through the first dielectric layer for corresponding with location of the second sacrificial layer;

removing the first sacrificial layer and the second sacrificial layer through the holes; and

forming a second dielectric layer which fills the holes.

8. The manufacturing method as claimed in claim 7, wherein the MEMS device is manufactured by the steps including:

providing a substrate;

forming a first insulation layer on the substrate, the first insulation layer having an opening exposing the substrate;

forming a first sacrificial layer filling the opening;

forming a movable electrode on the first sacrificial layer;

forming a second insulation layer on the first insulation layer; and

forming a fixer which connects the movable electrode with the second insulation layer or connects the movable electrode with the substrate.

9. The manufacturing method as claimed in claim 8, wherein the second dielectric layer is formed by chemical vapor deposition;

the CVD is carried out under the conditions of, reaction gases;

SiH4, O2 and N2, total flow rate of the reaction gases;

5 L/min˜

20 L/min, O2/SiH4 flow ratio;

3, temperature;

250°

C.˜

450°

C., and normal pressure.

10. The manufacturing method as claimed in claim 9, wherein a method of removing the first sacrificial layer and the second sacrificial layer is oxygen plasma ashing or nitrogen plasma ashing.

11. The manufacturing method as claimed in claim 7, wherein the movable electrode is formed of a material selected from Al, Ti, Cu, Co, Ni, Ta, Pt, Ag, Au or any combination thereof.

12. The manufacturing method as claimed in claim 7, wherein the first dielectric layer, the second dielectric layer, the first insulation layer and the second insulation layer are formed of a material selected from silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, carbon doped silicon oxynitride or any combination thereof.

13. The manufacturing method as claimed in claim 7, wherein the holes in the first dielectric layer are arranged in a grid pattern.

14. The manufacturing method as claimed in claim 13, wherein the second dielectric layer is formed of SiO2, the holes in the first dielectric layer have an aperture of 0.2 μ

m˜

1 μ

M and a depth-to-width ratio of 0.3˜

0.5.