INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE
First Claim
1. A method comprising:
- forming a single crystalline beam from a silicon layer on an insulator;
providing a coating of insulator material over the single crystalline beam;
forming a via through the insulator material exposing a wafer underlying the insulator, wherein the insulator material remains over the single crystalline beam;
providing a sacrificial material in the via and over the insulator material;
providing a lid on the sacrificial material; and
venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
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Accused Products
Abstract
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
20 Citations
25 Claims
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1. A method comprising:
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forming a single crystalline beam from a silicon layer on an insulator; providing a coating of insulator material over the single crystalline beam; forming a via through the insulator material exposing a wafer underlying the insulator, wherein the insulator material remains over the single crystalline beam; providing a sacrificial material in the via and over the insulator material; providing a lid on the sacrificial material; and venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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forming a single crystalline beam from a single crystalline silicon layer of an SOI substrate; protecting the single crystalline beam with an insulator material during cavity formation, wherein the cavity formation comprising forming an upper cavity and a lower cavity above and below the single crystalline beam, respectively; the upper cavity is formed above a BOX layer of the SOI substrate, by etching of a sacrificial layer formed over the insulator material that coats and protects exposed portions of the single crystalline beam; and the lower cavity is formed below the BOX layer by etching a portion of bulk substrate through a connecting via formed between the upper cavity and the lower cavity, the connecting via is lined with the insulator material that coats and protects the exposed portions of the single crystalline beam. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A structure, comprising:
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a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the single crystalline beam.
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22. A design structure readable by a machine used in design, manufacture, or simulation of an integrated circuit, the design structure comprising:
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a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate, insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the single crystalline beam. - View Dependent Claims (23, 24, 25)
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Specification