SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
1. A method for formation of a semiconductor device including a first wafer comprising a first single crystal layer comprising first transistors and first alignment mark, the method comprising:
- implanting to form a doped layer within a second wafer;
forming a second mono-crystalline layer on top of said first wafer by transferring at least a portion of said doped layer using layer transfer step, andcompleting the formation of second transistors on said second mono-crystalline layer comprising a step of forming a gate dielectric followed by second transistors gate formation step,wherein said second transistors are horizontally oriented.
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Abstract
A method for formation of a semiconductor device including a first wafer including a first single crystal layer comprising first transistors and first alignment mark, the method including: implanting to form a doped layer within a second wafer; forming a second mono-crystalline layer on top of the first wafer by transferring at least a portion of the doped layer using layer transfer step, and completing the formation of second transistors on the second mono-crystalline layer including a step of forming a gate dielectric followed by second transistors gate formation step, wherein the second transistors are horizontally oriented.
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Citations
42 Claims
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1. A method for formation of a semiconductor device including a first wafer comprising a first single crystal layer comprising first transistors and first alignment mark, the method comprising:
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implanting to form a doped layer within a second wafer; forming a second mono-crystalline layer on top of said first wafer by transferring at least a portion of said doped layer using layer transfer step, and completing the formation of second transistors on said second mono-crystalline layer comprising a step of forming a gate dielectric followed by second transistors gate formation step, wherein said second transistors are horizontally oriented. - View Dependent Claims (2, 10, 16, 18, 19, 23, 28, 29, 30, 35, 36, 37, 40)
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3-9. -9. (canceled)
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11-15. -15. (canceled)
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17. (canceled)
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20-22. -22. (canceled)
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24-27. -27. (canceled)
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31-34. -34. (canceled)
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38-39. -39. (canceled)
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41. (canceled)
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42. A method for formation of semiconductor device comprising:
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a first wafer comprising first mono-crystalline layer comprising first transistors, and comprising a step of implant to form second transistors within a second mono-crystalline layer, and transferring a second mono-crystalline layer on top of said first mono-crystalline layer wherein said method comprises the use of at least ten masks, each with its own unique patterns, and wherein said method is used for formation of at least two devices which are substantially different by the amount of logic, memory or Input-Output cells they have, wherein each of said two devices has been formed using the same said at least ten masks.
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Specification