Multi Zone Gas Injection Upper Electrode System

• US 20130126486A1
• Filed: 04/03/2012
• Published: 05/23/2013
• Est. Priority Date: 11/22/2011
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Andrew D. Bailey III
• Inventors: Dhindsa, Rajinder, Marakhtanov, Alexei, Hudson, Eric, Bailey, Andrew D. III, Bise, Ryan, Li, Lumin, Naw, Sang Ki, Rogers, Jim, Delgadino, Gerardo, Kellogg, Mike, Llera, Anthony Dela, Ehrlich, Darrell
• Granted Patent: US 10,622,195 B2
• Time in Patent Office: Days
• US Class Current: 219/121.48
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32642 Focus rings
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

Claims

11. A plasma processing system comprising:

a plasma chamber including;

a substrate support; and

an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones, wherein each one of the plurality of concentric gas injection zones includes a plurality of gas feeds, the plurality of gas feeds being evenly distributed around the corresponding gas injection zones, wherein at least one of the plurality of gas feeds includes a plasma arrestor and wherein a first plurality of gas feeds in a first concentric gas injection zone are offset clockwise from a second plurality of gas feeds in a second concentric gas injection zone; and

a controller coupled to the plasma chamber.

12. A method of selecting an etch rate using an upper electrode having multiple, concentric gas injection zones comprising:

creating a plasma in a plasma chamber;

reducing a first etch rate in a first concentric gas injection zone including injecting a tuning gas in the first concentric gas injection zone; and

reducing a second etch rate in a second concentric gas injection zone including injecting a tuning gas in the second concentric gas injection zone.

1. A plasma processing system comprising:

a plasma chamber including;

a substrate support; and

an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones; and

a controller coupled to the plasma chamber.

2. The plasma processing system of claim 1, wherein each one of the plurality of concentric gas injection zones includes a plurality of gas feeds, the plurality of gas feeds being evenly distributed around the corresponding gas injection zones.

3. Plasma processing system of claim 2, wherein a first plurality of gas feeds in a first concentric gas injection zone are aligned with a second plurality of gas feeds in a second concentric gas injection zone.

4. Plasma processing system of claim 2, wherein a first plurality of gas feeds in a first concentric gas injection zone are offset clockwise from a second plurality of gas feeds in a second concentric gas injection zone.

5. Plasma processing system of claim 2, wherein at least one of the plurality of gas feeds includes a plasma arrestor.

6. Plasma processing system of claim 5, wherein the plasma arrestor includes a plurality of small channels having a width too small to support a plasma.

7. Plasma processing system of claim 5, wherein the plasma arrestor includes a ground electrode.

8. The plasma processing system of claim 1, wherein each one of the plurality of concentric gas injection zones includes a plurality of concentric gas plenum rings and wherein the concentric gas plenum rings in a corresponding concentric gas injection zones are coupled together by a plurality of gas channels.

9. The plasma processing system of claim 1, wherein each one of the plurality of concentric gas injection zones includes a plurality of outlet ports.

10. The plasma processing system of claim 1, further comprising an RF source coupled to the inner upper electrode.

13. The method of claim 12, wherein reducing the first etch rate in the first concentric gas injection zone includes setting at least one of a first substrate temperature in the first concentric gas injection zone or a first upper electrode temperature in the first concentric gas injection zone to a temperature greater than at least one of a second substrate temperature in a second concentric gas injection zone or a second upper electrode temperature in the second concentric gas injection zone.

14. The method of claim 12, wherein the tuning gas reduces a carbon/fluorine ratio at a surface of a substrate to be processed.

15. The method of claim 12, wherein the tuning gas includes oxygen.

13-1. The method of claim 12, further comprising increasing a first etch rate in the first concentric gas injection zone includes setting at least one of a first substrate temperature in the first concentric gas injection zone or a first upper electrode temperature in the first concentric gas injection zone to a temperature less than at least one of a second substrate temperature in a second concentric gas injection zone or a second upper electrode temperature in the second concentric gas injection zone.