SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate in which a word line region is formed; and
a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the barrier metal layer including;
a first nitride material formed of a nitrified first material; and
a second nitride material formed of a nitrified second material,wherein the barrier metal layer is formed of a mixture of the first nitride material and the second nitride material, andwhere any one of the first material or the second material is rich in a metal used to form the metal nitride.
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Accused Products
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.
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Citations
26 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate in which a word line region is formed; and a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the barrier metal layer including; a first nitride material formed of a nitrified first material; and a second nitride material formed of a nitrified second material, wherein the barrier metal layer is formed of a mixture of the first nitride material and the second nitride material, and where any one of the first material or the second material is rich in a metal used to form the metal nitride. - View Dependent Claims (2, 3)
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4. A semiconductor device, comprising:
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a semiconductor substrate in which a word line region is formed; and a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the word line region including; a first nitride material formed of a nitrified first material; and a second nitride material formed of a nitrified second material, wherein the word line region is formed of a mixture of the first nitride material and the second nitride material, and wherein at least one of the first material or the second material is rich in a metal used to form the metal nitride. - View Dependent Claims (5, 6)
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7. A method of fabricating a semiconductor device, the method comprising:
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providing a semiconductor substrate in which a word line region is formed; depositing a first material on the word line region; forming a first nitride material by nitrifying the first material; determining whether the first nitride material has a desired thickness, where if the first nitride material has the desired thickness, then; depositing a second material on the first nitride material, forming a second nitride material by nitrifying the second material, and determining whether the second nitride material is deposited to a desired thickness, where if the second nitride material has the desired thickness, then; depositing a P+ polysilicon layer on the second nitride material, and where the first material or the second material is rich in a material used to form the first nitride material or the second nitride material. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a semiconductor device, the method comprising:
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providing a semiconductor substrate; depositing a first material on the semiconductor substrate; nitrifying the first material to form a first nitride material; determining whether the first nitride material has a desired thickness, where if the first nitride material has the desired thickness, then; depositing a second material on the first nitride material, nitrifying the second material to form a second nitride material, and determining whether the second nitride material is deposited to a desired thickness, where if the second nitride material has the desired thickness, then; forming a barrier metal layer on the second nitride material; and depositing a P+ polysilicon layer on the barrier metal layer, where at least one of the first material and the second material is rich in a metal used to form the first nitride material or the second nitride material. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification