HIGH EFFICIENCY LIGHT EMITTING DIODE

• US 20130126829A1
• Filed: 12/01/2010
• Published: 05/23/2013
• Est. Priority Date: 09/24/2010
• Status: Abandoned Application

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Yoon, Yeo Jin, Seo, Won Cheol
• Application Number:
  US13/812,944
• Publication Number:
  US 20130126829A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A high-efficiency LED includes a substrate, an n-semiconductor layer, an active layer, a p-semiconductor layer, and a transparent electrode layer. The substrate has a plurality of tapered recesses in the underside thereof, the recesses being filled with light-reflecting filler.

Claims

1. A high-efficiency light-emitting diode comprising:

a substrate having a first side, an opposing second side, and tapered recesses formed in the second side;

an n-semiconductor layer disposed on the first side of the substrate;

an active layer disposed on the n-semiconductor layer;

a p-semiconductor layer disposed on the active layer;

a transparent electrode layer disposed on the p-semiconductor layer; and

,

a light-reflecting filler disposed in the recesses.

2. The high-efficiency light-emitting diode according to claim 1, wherein the recesses have a depth that is ⅓

to ½

of the thickness of the substrate.

3. The high-efficiency light-emitting diode according to claim 1, wherein the thickness of the substrate is from 150 μ

m to 250 μ

m.

4. The high-efficiency light-emitting diode according to claim 1, wherein the light-emitting filler is one selected from the group consisting of TiO₂, PbCO₃, SiO₂, ZrO₂, PbO, Al₂O₃, ZnO, Sb₂O₃, and any combinations thereof.

5. The high-efficiency light-emitting diode according to claim 1, wherein side surfaces of the tapered recesses have an inclination of from 40°

to 70°

, with respect to the plane of the second surface.

6. The high-efficiency light-emitting diode according to claim 1, wherein the substrate has a concave-convex pattern on the first surface thereof.

7. The high-efficiency light-emitting diode according to claim 1, wherein the substrate is a sapphire substrate.

8. The high-efficiency light-emitting diode according to claim 1, further comprising:

an electrode pad formed on the transparent electrode layer; and

a reflecting layer disposed under the electrode pad.

9. The high-efficiency light-emitting diode according to claim 8, wherein the reflecting layer is disposed between the transparent electrode layer and the electrode pad.

10. The high-efficiency light-emitting diode according to claim 9, wherein the transparent electrode layer is disposed under the electrode pad and has a concave-convex configuration.

11. The high-efficiency light-emitting diode according to claim 1, further comprising a reflecting layer formed on a portion of the p-semiconductor layer that corresponds to the electrode pad,

wherein the transparent electrode layer covers is formed to cover the reflecting layer.

12. The high-efficiency light-emitting diode according to claim 8, wherein:

the electrode pad comprises extensions that extend from opposing edges thereof; and

the reflecting layer is disposed under the extensions.

13. The high-efficiency light-emitting diode according to claim 8, wherein the reflecting layer is a Distributed Bragg Reflector.