ORGANIC EL ELEMENT
First Claim
1. An organic EL element, comprising:
- an anode;
a cathode;
a functional layer that is disposed between the anode and the cathode and includes at least a light-emitting layer made of an organic material;
a hole injection layer disposed between the anode and the functional layer; and
a bank that defines a region in which the light-emitting layer is to be formed, whereinthe hole injection layercontains tungsten oxide,includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, andhas a recessed portion in an upper surface thereof at the region defined by the bank,the recessed portion has (i) an inner bottom surface that is in contact with a bottom surface of the functional layer, and (ii) an inner side surface that is continuous with the inner bottom surface and in contact at least with part of a side surface of the functional layer, andthe inner side surface of the recessed portion has a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.
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Accused Products
Abstract
In an organic EL element, a bank is formed on a hole injection layer so as to surround light-emitting layer. The hole injection layer is formed with a tungsten oxide thin film, and has, in an electronic state thereof, an occupied energy level 1.8 eV to 3.6 eV lower than the lowest energy level of a valence band of the hole injection layer. The hole injection layer has a recessed portion in an upper surface thereof. An inner surface of the recessed portion is in contact with a functional layer (light-emitting layer). the inner side surface of the recessed portion includes an upper edge that is one of aligned with part of a lower edge of the bank, the part being in contact with the functional layer, and in contact with a bottom surface of the bank.
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Citations
15 Claims
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1. An organic EL element, comprising:
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an anode; a cathode; a functional layer that is disposed between the anode and the cathode and includes at least a light-emitting layer made of an organic material; a hole injection layer disposed between the anode and the functional layer; and a bank that defines a region in which the light-emitting layer is to be formed, wherein the hole injection layer contains tungsten oxide, includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, and has a recessed portion in an upper surface thereof at the region defined by the bank, the recessed portion has (i) an inner bottom surface that is in contact with a bottom surface of the functional layer, and (ii) an inner side surface that is continuous with the inner bottom surface and in contact at least with part of a side surface of the functional layer, and the inner side surface of the recessed portion has a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A manufacturing method of an organic EL element, comprising:
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preparing an anode; forming a tungsten oxide layer above the anode by introducing a gas comprising an argon gas and an oxygen gas to a chamber of a sputtering device, a total pressure of the gas in the chamber being greater than approximately 2.7 pascals and at most equal to approximately 7.0 pascals, a partial pressure ratio of the oxygen gas with respect to the total pressure of the gas in the chamber being at least approximately 50% and at most approximately 70%, and an input power density per unit surface area of a sputtering target being at least approximately 1 W/cm2 and at most approximately 2.8 W/cm2; forming a bank above the tungsten oxide layer by forming a resist film including a resist material above the tungsten oxide layer and etching the resist film with a developing solution; after the formation of the bank, forming a hole injection layer by cleaning residuals of the resist film that adhere to the tungsten oxide layer with a cleaning liquid and dissolving part of the tungsten oxide layer with the cleaning liquid, the hole injection layer having a recessed portion in an upper surface thereof at a region defined by the bank, the recessed portion having an inner bottom surface and an inner side surface continuous with the inner bottom surface; forming a functional layer by coating the inner bottom surface and the inner side surface of the recessed portion of the hole injection layer with ink by ejecting drops of the ink into the region defined by the bank and drying the ink; and forming a cathode above the functional layer, wherein in the formation of the hole injection layer, the inner side surface of the recessed portion is formed to be in contact with at least part of a side surface of the functional layer and to have a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank. - View Dependent Claims (14, 15)
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13. A manufacturing method of an organic EL element, comprising:
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preparing an anode; forming a tungsten oxide layer above the anode by introducing a gas comprising an argon gas and an oxygen gas to a chamber of a sputtering device, a total pressure of the gas in the chamber being greater than approximately 2.7 pascals and at most equal to approximately 7.0 pascals, a partial pressure ratio of the oxygen gas with respect to the total pressure of the gas in the chamber being at least approximately 50% and at most approximately 70%, and an input power density per unit surface area of a sputtering target being at least approximately 1 W/cm2 and at most approximately 2.8 W/cm2; forming a bank above the tungsten oxide layer by forming a resist film including a resist material above the tungsten oxide layer and etching the resist film with a developing solution, and forming a hole injection layer by cleaning residuals of the resist film that adhere to the tungsten oxide layer with the developing solution and dissolving part of the tungsten oxide layer with the developing solution, the hole injection layer having a recessed portion in an upper surface thereof at a region defined by the bank, the recessed portion having an inner bottom surface and an inner side surface continuous with the inner bottom surface; forming a functional layer by coating the inner bottom surface and the inner side surface of the recessed portion of the hole injection layer with ink by ejecting drops of the ink into the region defined by the bank and drying the ink; and forming a cathode above the functional layer, wherein in the formation of the hole injection layer, the inner side surface of the recessed portion is formed to be in contact with at least part of a side surface of the functional layer and to have a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.
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Specification