ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURING THEREOF
First Claim
1. An organic EL element comprising:
- an anode;
a cathode;
banks;
a functional layer between the anode and the cathode, the functional layer including one or more sublayers, the one or more sublayers including a light-emitting sublayer, the light-emitting sublayer defined by the banks and containing an organic material; and
a hole injection layer between the anode and the functional layer, whereinthe hole injection layer comprises tungsten oxide,tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six,the hole injection layer includes a crystal of the tungsten oxide, a particle diameter of the crystal being on an order of nanometers, the hole injection layer has a surface facing the functional layer and has arecessed structure such that a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions of the surface, andthe recessed structure has a recessed portion whose inner surface is in contact with the functional layer.
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Accused Products
Abstract
An organic light-emitting element comprising: an anode; a cathode; banks; a functional layer between the anode and the cathode; and a hole injection layer between the anode and the functional layer. The functional layer includes at least a light-emitting sublayer defined by the banks and that contains an organic material. The hole injection layer comprises tungsten oxide and includes a crystal of the tungsten oxide, whose particle diameter is on an order of nanometers. Tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six. The hole injection layer has a surface facing the functional layer, and a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions, thereby forming a recessed structure having a recessed portion whose inner surface is in contact with the functional layer.
17 Citations
23 Claims
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1. An organic EL element comprising:
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an anode; a cathode; banks; a functional layer between the anode and the cathode, the functional layer including one or more sublayers, the one or more sublayers including a light-emitting sublayer, the light-emitting sublayer defined by the banks and containing an organic material; and a hole injection layer between the anode and the functional layer, wherein the hole injection layer comprises tungsten oxide, tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six, the hole injection layer includes a crystal of the tungsten oxide, a particle diameter of the crystal being on an order of nanometers, the hole injection layer has a surface facing the functional layer and has a recessed structure such that a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions of the surface, and the recessed structure has a recessed portion whose inner surface is in contact with the functional layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A manufacturing method for an organic EL element, comprising:
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an anode preparation step of preparing an anode; a tungsten oxide layer forming step of forming a tungsten oxide layer on the anode by using a sputtering gas including argon gas and oxygen gas and by using tungsten as a sputtering target, under film forming conditions such that a total pressure of the sputtering gas is at least 2.3 Pa and at most 7.0 Pa, a partial pressure of the oxygen gas in the sputtering gas is at least 50% and at most 70%, an input power density per unit area of the sputtering target is at least 1.5 W/cm2 and at most 6.0 W/cm2, and a value yielded by dividing the total pressure of the sputtering gas by the input power density is larger than 0.7 Pa·
cm2/W;a bank forming step of forming banks above the tungsten oxide layer by forming a resist film including resist material above the tungsten oxide layer and etching the resist film with a developing solution; a hole injection layer forming step, subsequent to the bank forming step, of forming a hole injection layer by (i) cleaning, with a cleaning fluid, a surface of the tungsten oxide layer and thereby removing residuals of the resist film adhering to the surface of the tungsten oxide layer and (ii) dissolving a part of the tungsten oxide layer with the cleaning fluid, the hole injection layer formed such that a portion of an upper surface of the hole injection layer facing the functional layer is located closer to the anode than other portions of the upper surface, the portion forming a recessed portion composed of an inner bottom surface and an inner side surface that is continuous with the inner bottom surface; a functional layer forming step of forming a functional layer by depositing ink into a region of the hole injection layer defined by the banks, applying the ink with respect to the inner bottom surface and the inner side surface such that the ink is in contact with the inner bottom surface and the inner side surface, and drying the ink; and a cathode forming step of forming a cathode above the functional layer. - View Dependent Claims (22, 23)
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21. A manufacturing method for an organic EL element, comprising:
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an anode preparation step of preparing an anode; a tungsten oxide layer forming step of forming a tungsten oxide layer on the anode by using a sputtering gas including argon gas and oxygen gas and by using tungsten as a sputtering target, under film forming conditions such that a total pressure of the sputtering gas is at least 2.3 Pa and at most 7.0 Pa, a partial pressure of the oxygen gas in the sputtering gas is at least 50% and at most 70%, an input power density per unit area of the sputtering target is at least 1.5 W/cm2 and at most 6.0 W/cm2, and a value yielded by dividing the total pressure of the sputtering gas by the input power density is larger than 0.7 Pa·
cm2/W;a hole injection layer forming step of, while forming banks above the tungsten oxide layer by forming a resist film including resist material above the tungsten oxide layer and etching the resist film with a developing solution, forming a hole injection layer by (i) cleaning, with the developing solution, a surface of the tungsten oxide layer and thereby removing residuals of the resist film adhering to the surface of the tungsten oxide layer and (ii) dissolving a part of the tungsten oxide layer with the developing solution, the hole injection layer formed such that a portion of an upper surface of the hole injection layer facing the functional layer is located closer to the anode than other portions of the upper surface, the portion forming a recessed portion composed of an inner bottom surface and an inner side surface that is continuous with the inner bottom surface; a functional layer forming step of forming a functional layer by depositing ink into a region of the hole injection layer defined by the banks, applying the ink with respect to the inner bottom surface and the inner side surface such that the ink is in contact with the inner bottom surface and the inner side surface, and drying the ink; and a cathode forming step of forming a cathode above the functional layer.
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Specification