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SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS

  • US 20130126906A1
  • Filed: 03/18/2011
  • Published: 05/23/2013
  • Est. Priority Date: 05/10/2010
  • Status: Active Grant
First Claim
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1. A method of manufacturing a silicon carbide epitaxial wafer, the method comprising:

  • I) annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <

    0001>

    face, in an atmosphere comprising a reducing gas at a first temperature T1 for a treatment time t;

    II) reducing the temperature of the substrate in the reducing gas atmosphere; and

    thenIII) performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in I), while supplying a gas mixture comprising a first gas comprising a silicon atom and a second gas comprising a carbon atom.

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