LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

• US 20130126918A1
• Filed: 12/28/2012
• Published: 05/23/2013
• Est. Priority Date: 11/07/2007
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: HSU, Chen-Peng, HSIEH, Chia-Fen, LU, Chien-Chun, CHIANG, Ya-Hui, HU, Hung-Lieh
• Granted Patent: US 8,946,987 B2
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Abstract

A light emitting device and a fabricating method thereof are described, wherein the light emitting device includes a substrate, a wall, a first LED chip and a light conversion filling. The first LED chip is disposed on a surface of the substrate. The wall is disposed on the surface of the substrate, and surrounds the first LED chip. A first angle between a central axis of the wall and an inner surface of the wall is 0 degree or is acute, a second angle between the central axis of the wall and an outer surface of the wall is 0 degree or is acute, and the outer surface of the wall and the substrate has a space therebetween. The light conversion filling is surrounded by the light conversion wall, and is disposed on the first LED chip.

Claims

1. A light emitting device, comprising:

a substrate;

a first light emitting diode (LED) chip, disposed on a surface of the substrate;

a wall, disposed on the surface of the substrate, and surrounding the first LED chip, wherein a first angle between a central axis of the wall and an inner surface of the wall is 0 degree or is acute, a second angle between the central axis of the wall and an outer surface of the wall is 0 degree or is acute, and the outer surface of the wall and the substrate has a space therebetween; and

a light conversion filling, disposed on the first LED chip and surrounded by the wall.

2. The light emitting device according to claim 1, wherein the wall comprises a first fluorescent material, the light conversion filling comprises a second fluorescent material, a first wavelength of light emitted by the first fluorescent material is different from a second wavelength of light emitted by the second fluorescent material.

3. The light emitting device according to claim 1, wherein the wall comprises a first fluorescent material, the light conversion filling comprises a second fluorescent material, the first fluorescent material and the second fluorescent material are the same, and a concentration of the first fluorescent material is different from a concentration of the second fluorescent material.

4. The light emitting device according to claim 1, wherein the light conversion filling has an average width and an average height, and a ratio of the average width and the average height is 0.1:

10.

5. The light emitting device according to claim 1, wherein a refractive index of the light conversion filling is different from a refractive index of the wall.

6. The light emitting device according to claim 1, wherein the wall covers the LED chip partially.

7. The light emitting device according to claim 1, wherein the light conversion filling partially covers the substrate surrounded by the wall.

8. The light emitting device according to claim 1, further comprising:

a reflection layer, formed on at last one of an outer surface of the wall and a interface of the wall and the light conversion filling.

9. The light emitting device according to claim 1, further comprising:

a light diffusion layer, covering the first LED chip, covered by the light conversion filling, and surrounded by the wall.

10. The light emitting device according to claim 9, further comprising:

a plurality of second LED chips, disposed on the surface of the substrate, covered by the light diffusion layer, and a wavelength of light emitted by the plurality of second LED chips being different from a wavelength of light emitted by the first LED chip.

11. The light emitting device according to claim 1, further comprising:

a plurality of second LED chips, disposed on the surface of the substrate, and covered by the wall.

12. The light emitting device according to claim 11, wherein a wavelength of light emitted by the first LED chip is different from a wavelength of light emitted by the plurality of second LED chips.

13. A fabricating method of a light emitting device, comprising:

disposing a first LED chip on a surface of a substrate;

forming a wall on the surface of the substrate, wherein the wall surrounds the first LED chip, an outer surface of the wall and the substrate have a space therebetween, and the wall associates to a first color temperature; and

forming a light conversion filling in a space surrounded by the wall, according to the first color temperature, wherein the light conversion filling is disposed on the first LED chip, and associates to a second color temperature different from the first color temperature.

14. The fabricating method according to claim 13, wherein a first angle between a central axis of the wall and an inner surface of the wall is 0 degree or is acute, a second angle between the central axis of the wall and the outer surface of the wall is 0 degree or is acute.

15. The fabricating method according to claim 13, wherein the wall covers the first LED chip partially.

16. The fabricating method according to claim 13, wherein the light conversion filling partially covers the substrate surrounded by the wall.

17. The fabricating method according to claim 13, further comprising:

forming a plurality of second LED chips on the surface of the substrate, wherein the wall covers the plurality of second LED chips.

18. The fabricating method according to claim 17, wherein a wavelength of light emitted by the first LED chip is different from a wavelength of light emitted by the plurality of second LED chips.

19. The fabricating method according to claim 13, wherein the wall comprising a first fluorescent material, the light conversion filling comprising a second fluorescent material, a first wavelength of light emitted by the first fluorescent material is different from a second wavelength of light emitted by the second fluorescent material.

20. The fabricating method according to claim 13, wherein the wall comprising a first fluorescent material, the light conversion filling comprising a second fluorescent material, the first fluorescent material and the second fluorescent material are the same, and a first concentration of the first fluorescent material is different from a second concentration of the second fluorescent material.

21. The fabricating method according to claim 13, wherein a refractive index of the light conversion filling is different from a refractive index of the wall.

22. The fabricating method according to claim 13, wherein the light conversion filling has an average width and an average height, and a ratio of the average width and the average height is 0.1:

10.

23. The fabricating method according to claim 13, further comprising:

forming a reflection layer on at least one of an outer surface of the wall and an interface of the wall and the light conversion filling.

24. The fabricating method according to claim 13, further comprising:

forming a light diffusion layer on the first LED chip, wherein the light diffusion layer is surrounded by the wall and is covered by the light conversion filling.

25. The fabricating method according to claim 24, further comprising:

forming a plurality of second LED chips on the surface of the substrate, wherein the light diffusion layer covers the plurality of second LED chips, and a wavelength of light emitted by the plurality of second LED chips are different from a wavelength of light emitted by the first LED chip.