Optoelectronic Semiconductor Element and Associated Method of Production by Direct Welding of Glass Housing Components by Means of Ultra Short Pulsed Laser without Glass Solder

• US 20130126938A1
• Filed: 07/15/2011
• Published: 05/23/2013
• Est. Priority Date: 07/28/2010
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: Joachim Wirth-Schon
• Inventors: Eberhardt, Angela, Wirth-Schn, Joachim
• Application Number:
  US13/812,809
• Publication Number:
  US 20130126938A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: B23K 26/0624 using ultrashort pulses, i.e. pulses of 1ns or less
• CPC Class Codes: B23K 26/0676 into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
• CPC Class Codes: B23K 26/206 Laser sealing
• CPC Class Codes: B23K 26/57 the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
• CPC Class Codes: C03B 23/245 Hollow glass sheets
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants

Abstract

An optoelectronic semiconductor element having a light source, a housing and electrical terminals, wherein the optoelectronic semiconductor element comprises components, which are produced from glass, and wherein at least two components touch at boundary surfaces adjusted to one another and are welded to one another directly there.

Claims

1. An optoelectronic semiconductor element having a light source, a housing and electrical terminals, wherein the optoelectronic semiconductor element comprises components, which are produced from glass, and wherein at least two components touch at boundary surfaces adjusted to one another and are welded to one another directly there.

2. The optoelectronic semiconductor element as claimed in claim 1, wherein the components are integral parts of the housing.

3. The optoelectronic semiconductor element as claimed in claim 1, wherein the semiconductor component is an LED or OLED.

4. A method for manufacturing an optoelectronic semiconductor element as claimed in claim 1, wherein the welding takes place at room temperature by ultra short laser pulses.

5. The method as claimed in claim 4, wherein the laser pulses are between 100 fs and 500 ps long.

6. The method as claimed in claim 4, wherein the repetition rate of the laser pulse is between 10 kHz and 2 MHz.

7. The method as claimed in claim 4, wherein a femto or picosecond laser is used as a laser.

8. The method as claimed in claim 4, wherein the laser pulses are between 500 fs and 100 ps.