SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first shaped pattern in which a plurality of first holes are arranged and of which a width is periodically changed along an arrangement direction of the first holes;
a second shaped pattern in which a plurality of second holes are arranged and of which a width is periodically changed along an arrangement direction of the second holes; and
a slit which is formed along the arrangement direction of the first holes and separates the first shaped pattern and the second shaped pattern.
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Abstract
According to one embodiment, there are provided a first shaped pattern in which a plurality of first holes are arranged and of which a width is periodically changed along an arrangement direction of the first holes, a second shaped pattern in which a plurality of second holes are arranged and of which a width is periodically changed along an arrangement direction of the second holes, and slits which are formed along the arrangement direction of the first holes and separate the first shaped pattern and the second shaped pattern.
24 Citations
20 Claims
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1. A semiconductor device comprising:
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a first shaped pattern in which a plurality of first holes are arranged and of which a width is periodically changed along an arrangement direction of the first holes; a second shaped pattern in which a plurality of second holes are arranged and of which a width is periodically changed along an arrangement direction of the second holes; and a slit which is formed along the arrangement direction of the first holes and separates the first shaped pattern and the second shaped pattern. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first stacked body which is formed by alternatively stacking an impurity-added silicon layer and an interlayer insulating film and of which a width is periodically changed along a row direction; a second stacked body which is formed by alternatively stacking an impurity-added silicon layer and an interlayer insulating film and of which a width is periodically changed along the row direction; first holes which are formed along a stacking direction of the first stacked body and are arranged in the first stacked body in the row direction; second holes which are formed along a stacking direction of the second stacked body and are arranged in the second stacked body in the row direction; slits which separate the first stacked body and the second stacked body in each of rows; a first channel layer which is formed in the first hole along the stacking direction of the first stacked body; a first tunnel insulating film which is formed between an inner surface of the first hole and the first channel layer; a first charge trap layer which is formed between the inner surface of the first hole and the first tunnel insulating film; a first block insulating film which is formed between the inner surface of the first hole and the first charge trap layer; a second channel layer which is formed in the second hole along the stacking direction of the second stacked body; a second tunnel insulating film which is formed between an inner surface of the second hole and the second channel layer; a second charge trap layer which is formed between the inner surface of the second hole and the second tunnel insulating film; and a second block insulating film which is formed between the inner surface of the second hole and the second charge trap layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a semiconductor device, comprising:
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forming a plurality of core material patterns on a processing target film, the core material patterns being arranged such that a pitch in a second direction is narrower than that in a first direction; forming a side wall pattern along an outer periphery of the core material pattern, the side wall pattern being formed successively in the second direction and separately in the first direction; removing the core material pattern after the side wall pattern is formed; and processing the processing target film such that the side wall pattern is transferred thereon. - View Dependent Claims (15, 16, 17)
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18. A method of manufacturing a semiconductor device, comprising:
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forming a stacked body in which an impurity-added silicon layer and an interlayer insulating film are alternatively stacked; forming a plurality of core material patterns on the stacked body, the core material patterns being arranged such that a pitch in a column direction is narrower than that in a row direction; forming a side wall pattern along an outer periphery of the core material pattern, the side wall pattern being formed successively in the column direction and separately in the row direction; removing the core material pattern after the side wall pattern is formed; processing the stacked body such that the side wall pattern is transferred thereon, and thus forming first holes which are arranged in the column direction through the stacked body and forming slits which separate the stacked body in the row direction; forming a block insulating film on an inner surface of the first hole; forming a charge trap layer on a surface of the block insulating film in the first hole; forming a tunnel insulating film on a surface of the charge trap layer in the first hole; and forming a channel layer on a surface of the tunnel insulating film in the first hole. - View Dependent Claims (19, 20)
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Specification