SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

• US 20130127001A1
• Filed: 11/12/2012
• Published: 05/23/2013
• Est. Priority Date: 11/11/2011
• Status: Abandoned Application

• Current Assignee: Xintec Incorporated
• Original Assignee: Xintec Incorporated
• Inventors: Wen, Ying-Nan, Liu, Chien-Hung, Yang, Wei-Chung
• Application Number:
  US13/674,264
• Publication Number:
  US 20130127001A1
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A semiconductor package is provided, including a silicon-containing substrate, a photo-sensor chip disposed on the silicon-containing substrate, a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip, an encapsulating layer encapsulating the photo-sensor chip and the conductive lines, and a colloid lens disposed on the encapsulating layer. With the photo-sensor chip stacked on the silicon-containing substrate, a circuit board may have a reduced region that is occupied by the semiconductor package. A method of fabricating the semiconductor package is also provided.

Claims

1. A semiconductor package, comprising:

a silicon-containing substrate;

a photo-sensor chip disposed on the silicon-containing substrate;

a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip;

an encapsulating layer formed on the silicon-containing substrate and encapsulating the photo-sensor chip and the conductive lines; and

a colloid lens disposed on the encapsulating layer.

2. The semiconductor package of claim 1, further comprising a plurality of conductive pads disposed on the silicon-containing substrate, and a plurality of electrode pads disposed on the photo-sensor chip, wherein the conductive lines are connected to the conductive pads and the electrode pads and electrically connected to the silicon-containing substrate and the photo-sensor chip.

3. The semiconductor package of claim 1, wherein the photo-sensor chip has a photo-sensor region corresponding in position to the colloid lens.

4. The semiconductor package of claim 1, further comprising a through silicon via penetrating the silicon-containing substrate.

5. The semiconductor package of claim 4, further comprising a redistribution layer formed on a side of the silicon-containing substrate where the photo-sensor chip is not disposed and electrically connected to the through silicon via.

6. The semiconductor package of claim 5, further comprising a conductive element disposed on the redistribution layer.

7. The semiconductor package of claim 1, wherein the colloid lens and the encapsulating layer are made of the same material.

8. A method of fabricating a semiconductor package, comprising:

disposing a photo-sensor chip on a silicon-containing substrate;

electrically connecting a plurality of conductive lines to the silicon-containing substrate and the photo-sensor chip;

forming on the silicon-containing substrate an encapsulating layer that encapsulates the photo-sensor chip and the conductive lines; and

disposing a colloid lens on the encapsulating layer via a mold.

9. The method of claim 8, further comprising disposing a plurality of conductive pads on the silicon-containing substrate, and disposing a plurality of electrode pads on the photo-sensor chip, wherein the conductive lines are connected to the conductive pads and the electrode pads and electrically connected to the silicon-containing substrate and the photo-sensor chip.

10. The method of claim 8, wherein the photo-sensor chip has a photo-sensor region corresponding in position to the photo-sensor region.

11. The method of claim 8, further comprising, prior to forming the colloid lens:

forming a through silicon via penetrating the silicon-containing substrate, and disposing on a side of the silicon-containing substrate where the encapsulating layer is not formed a redistribution layer electrically connected to the through silicon via; and

disposing a conductive element on the redistribution layer.

12. The method of claim 11, further comprising, after forming the colloid lens, disposing a conductive element on the redistribution layer.

13. The method of claim 8, further comprising, prior to disposing the photo-sensor chip, forming a through silicon via penetrating the silicon-containing substrate, and disposing on a side of the silicon-containing substrate wherein the photo-sensor chip is not disposed a redistribution layer electrically connected to the through silicon via.

14. The method of claim 8, wherein the colloid lens and the encapsulating layer are made of the same material.