LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE
First Claim
1. A light-emitting diode comprising:
- a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦
X1≦
1), and a first cladding layer and a second cladding layer that sandwich the active layer,a current diffusion layer formed on the light-emitting unit, anda functional substrate bonded to the current diffusion layer, whereinthe first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦
X2≦
1 and 0≦
Y1≦
1), andthe number of pairs of the well layer and the barrier layer is not more than five.
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Accused Products
Abstract
A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦X1≦1), and a first cladding layer and a second cladding layer that sandwich the active layer, a current diffusion layer formed on the light-emitting unit, and a functional substrate bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦X2≦1 and 0≦Y1≦1), and the number of pairs of the well layer and the barrier layer is not more than five.
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Citations
25 Claims
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1. A light-emitting diode comprising:
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a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦
X1≦
1), and a first cladding layer and a second cladding layer that sandwich the active layer,a current diffusion layer formed on the light-emitting unit, and a functional substrate bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦
X2≦
1 and 0≦
Y1≦
1), andthe number of pairs of the well layer and the barrier layer is not more than five. - View Dependent Claims (3, 4, 5, 6, 7, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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2. A light-emitting diode comprising:
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a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦
X1≦
1) and a barrier layer formed from a compound semiconductor having a composition formula of (AlX3Ga1-X3)Y2In1-Y2P (wherein 0≦
X3≦
1 and 0≦
Y2≦
1), and a first cladding layer and a second cladding layer that sandwich the active layer,a current diffusion layer formed on the light-emitting unit, and a functional substrate bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦
X2≦
1 and 0≦
Y1≦
1), andthe number of pairs of the well layer and the barrier layer is not more than five.
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8. A light-emitting diode comprising:
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a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦
X1≦
1), and a first cladding layer and a second cladding layer that sandwich the active layer,a current diffusion layer formed on the light-emitting unit, and a functional substrate, which comprises a reflective layer that is disposed facing the light-emitting unit and has a reflectance of at least 90% relative to an emission wavelength, and which is bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦
X2≦
1 and 0≦
Y1≦
1), andthe number of pairs of the well layer and the barrier layer is not more than five. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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9. A light-emitting diode comprising:
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a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦
X1≦
1) and a barrier layer formed from a compound semiconductor having a composition formula of (AlX3Ga1-X3)2In1-Y2P (wherein 0≦
X3≦
1 and 0≦
Y2≦
1), and a first cladding layer and a second cladding layer that sandwich the active layer,a current diffusion layer formed on the light-emitting unit, and a functional substrate, which comprises a reflective layer that is disposed facing the light-emitting unit and has a reflectance of at least 90% relative to the emission wavelength, and which is bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦
X2≦
1 and 0≦
Y1≦
1), andthe number of pairs of the well layer and the barrier layer is not more than five.
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Specification