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SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

  • US 20130134411A1
  • Filed: 04/05/2011
  • Published: 05/30/2013
  • Est. Priority Date: 04/14/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • an insulating substrate;

    a gate electrode formed on the insulating substrate;

    an insulating layer formed on the gate electrode;

    an oxide semiconductor layer formed on the insulating layer and containing at least one element selected from the group consisting of In, Zn and Ga;

    first and second source electrodes formed on the insulating layer; and

    first and second drain electrodes formed on the insulating layer;

    wherein;

    the second source electrode is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode;

    the second drain electrode is formed to be in contact with a top surface of the first drain electrode and inner to the first drain electrode; and

    the oxide semiconductor layer is formed to be in contact with the top surface of the first source electrode and the top surface of the first drain electrode.

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