SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
First Claim
1. A semiconductor device, comprising:
- an insulating substrate;
a gate electrode formed on the insulating substrate;
an insulating layer formed on the gate electrode;
an oxide semiconductor layer formed on the insulating layer and containing at least one element selected from the group consisting of In, Zn and Ga;
first and second source electrodes formed on the insulating layer; and
first and second drain electrodes formed on the insulating layer;
wherein;
the second source electrode is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode;
the second drain electrode is formed to be in contact with a top surface of the first drain electrode and inner to the first drain electrode; and
the oxide semiconductor layer is formed to be in contact with the top surface of the first source electrode and the top surface of the first drain electrode.
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Accused Products
Abstract
A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).
9 Citations
21 Claims
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1. A semiconductor device, comprising:
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an insulating substrate; a gate electrode formed on the insulating substrate; an insulating layer formed on the gate electrode; an oxide semiconductor layer formed on the insulating layer and containing at least one element selected from the group consisting of In, Zn and Ga; first and second source electrodes formed on the insulating layer; and first and second drain electrodes formed on the insulating layer; wherein; the second source electrode is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode; the second drain electrode is formed to be in contact with a top surface of the first drain electrode and inner to the first drain electrode; and the oxide semiconductor layer is formed to be in contact with the top surface of the first source electrode and the top surface of the first drain electrode. - View Dependent Claims (2, 15, 16, 17, 18, 19, 20, 21)
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3. A semiconductor device, comprising:
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an insulating substrate; a gate electrode formed on the insulating substrate; an insulating layer formed on the gate electrode; an oxide semiconductor layer formed on the insulating layer and containing at least one element selected from the group consisting of In, Zn and Ga; first and second source electrodes formed on the insulating layer; and first and second drain electrodes formed on the insulating layer; wherein; the second source electrode is formed to be in contact with a bottom surface of the first source electrode; the second drain electrode is formed to be in contact with a bottom surface of the first drain electrode; and the oxide semiconductor layer is formed to be in contact with a top surface of the first source electrode and a top surface of the first drain electrode. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification