SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130134413A1
• Filed: 11/15/2012
• Published: 05/30/2013
• Est. Priority Date: 11/30/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, MATSUBAYASHI, Daisuke
• Granted Patent: US 9,076,871 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1_XM2_(1-X)Zn_YO_Z (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen.

Claims

1. An oxide material represented as InM1_XM2_(1-X)Zn_YO_Z (0<

X<

1, 0<

Y<

1, and Z>

1),

wherein M1 is an element belonging to Group 13,

wherein M2 is an element belonging to Group 4 or Group 14, and

wherein a content of M2 is greater than or equal to 1 atomic % and less than 50 atomic % of a content of M1.

2. The oxide material according to claim 1, wherein M1 is gallium.

3. The oxide material according to claim 1, wherein M2 is any one of titanium, zirconium, hafnium, germanium, and tin.

4. The oxide material according to claim 1, wherein M2 is any one of titanium, zirconium, and hafnium.

5. A semiconductor device comprising the oxide material according to claim 1.

6. A semiconductor device having a transistor, the transistor comprising the oxide material according to claim 1.

7. An electronic device comprising the semiconductor device according to claim 5.

8. A display device comprising the semiconductor device according to claim 5.

9. The electronic device according to claim 7, wherein the electronic device is selected from a television set, a computer, and a tablet terminal.

10. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer overlapping with the gate electrode layer; and

an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer positioned therebetween,

wherein the oxide semiconductor layer comprises an oxide material represented as InM1_XM2_(1-X)Zn_YO_Z (0<

X<

1, 0<

Y<

1, and Z>

1),

wherein M1 is an element belonging to Group 13,

wherein M2 is an element belonging to Group 4 or Group 14, and

wherein a content of M2 is greater than or equal to 1 atomic % and less than 50 atomic % of a content of M1.

11. The semiconductor device according to claim 10, wherein M1 is gallium.

12. The semiconductor device according to claim 10, wherein M2 is any one of titanium, zirconium, hafnium, germanium, and tin.

13. The semiconductor device according to claim 10, wherein M2 is any one of titanium, zirconium, and hafnium.

14. An electronic device comprising the semiconductor device according to claim 10.

15. The electronic device according to claim 14, wherein the electronic device is selected from a television set, a computer, and a tablet terminal.

16. A display device comprising the semiconductor device according to claim 10.