OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130134457A1
• Filed: 12/31/2012
• Published: 05/30/2013
• Est. Priority Date: 10/29/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: PENG, Wei-Chih, HSU, Ta-Cheng, SHEN, Yu-Jiun, TSAI, Ching-Fu
• Granted Patent: US 8,946,736 B2
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H10K 50/854 comprising scattering means
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 50/858 comprising refractive means, e.g. lenses
• CPC Class Codes: H10K 59/877 comprising scattering means
• CPC Class Codes: H10K 59/878 comprising reflective means
• CPC Class Codes: H10K 59/879 comprising refractive means, e.g. lenses

Abstract

An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Claims

1. An optoelectronic device comprising:

a first layer having an upper surface and a lower surface;

an upper hollow component being inside the first layer and having a first width;

a lower hollow component being closer to the lower surface than the upper hollow component, and having a second width larger than the first width; and

an active layer formed on the first layer.

2. The optoelectronic device of claim 1, further comprising rods formed on the first layer.

3. The optoelectronic device of claim 2, wherein the rods comprise an oxide or a nitride.

4. The optoelectronic device of claim 2, wherein the rods expose the first layer.

5. The optoelectronic device of claim 2, wherein the rods cover 20%-60% area of the upper surface.

6. The optoelectronic device of claim 2, wherein the rods are reflective.

7. The optoelectronic device of claim 2, wherein at least one of the rods has a height of 30-300 nm.

8. The optoelectronic device of claim 2, wherein at least one of the rods has a width of 0.1-10 μ

m

9. The optoelectronic device of claim 2, further comprising a second layer formed on the rods.

10. The optoelectronic device of claim 1, wherein the upper hollow component and the lower hollow component are formed in an array configuration.

11. The optoelectronic device of claim 1, wherein the upper hollow component and the lower hollow component are connected with each other.

12. The optoelectronic device of claim 1, wherein the first width and the second width are between 10 nm and 2000 nm.

13. The optoelectronic device of claim 1, further comprising a layer formed on the first layer and having hollow components.

14. The optoelectronic device of claim 13, wherein the first layer and the layer have the same material.

15. The optoelectronic device of claim 1, further comprising an unintentionally doped layer or an undoped layer formed on the first layer.

16. The optoelectronic device of claim 1, further comprising a substrate formed on the lower surface.