Semiconductor Device with Field Electrode
First Claim
1. A method of producing a semiconductor device, the method comprising:
- providing a semiconductor body having a first surface and a dielectric layer arranged on the first surface;
forming at least one first trench in the dielectric layer, the at least one first trench extending to the semiconductor body and defining a dielectric mesa region in the dielectric layer;
forming a second trench in the dielectric mesa region distant to the at least one first trench;
forming a semiconductor layer on uncovered regions of the semiconductor body in the at least one first trench; and
forming a field electrode in the second trench.
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Accused Products
Abstract
A method of producing a semiconductor device includes providing a semiconductor body having a first surface and a dielectric layer arranged on the first surface and forming at least one first trench in the dielectric layer. The at least one first trench extends to the semiconductor body and defines a dielectric mesa region in the dielectric layer. The method further includes forming a second trench in the dielectric mesa region distant to the at least one first trench, forming a semiconductor layer on uncovered regions of the semiconductor body in the at least one first trench and forming a field electrode in the second trench.
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Citations
20 Claims
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1. A method of producing a semiconductor device, the method comprising:
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providing a semiconductor body having a first surface and a dielectric layer arranged on the first surface; forming at least one first trench in the dielectric layer, the at least one first trench extending to the semiconductor body and defining a dielectric mesa region in the dielectric layer; forming a second trench in the dielectric mesa region distant to the at least one first trench; forming a semiconductor layer on uncovered regions of the semiconductor body in the at least one first trench; and forming a field electrode in the second trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for forming a MOS transistor, the method comprising:
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providing a semiconductor body comprising a field electrode and a field electrode dielectric, the field electrode dielectric insulating the field electrode from semiconductor regions of the semiconductor body; forming at least one trench in the field electrode dielectric distant to the field electrode; and forming a gate electrode in the at least one trench. - View Dependent Claims (19, 20)
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Specification