MEMS Switch Having Cantilevered Actuation

• US 20130140155A1
• Filed: 02/14/2012
• Published: 06/06/2013
• Est. Priority Date: 02/14/2011
• Status: Abandoned Application

• Current Assignee: Andrei Pavlov, Ilkka Urvas, Yelena Pavlova
• Original Assignee: Andrei Pavlov, Ilkka Urvas, Yelena Pavlova
• Inventors: Urvas, Ilkka, Pavlov, Andrei, Pavlova, Yelena
• Application Number:
  US13/396,525
• Publication Number:
  US 20130140155A1
• Time in Patent Office: Days
• US Class Current: 200/181
• CPC Class Codes: B81B 2201/016 having a bridge fixed on two ends and connected to one or more dimples
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

A MEMS switch comprises a top cantilevered conductor that moves downwardly. At least one first insulator layer is positioned below the top cantilevered conductor. At least one second insulator layer is positioned below the at least one first insulator layer such that at least one gap is formed between the top cantilevered conductor and the at least one second insulator layer. The gap has a thickness in the range 0.5 Å to 100 Å when the top cantilevered conductor is at rest. The thickness of the at least one gap decreases when the top cantilevered conductor is moved downwardly. At least one contact conductor is positioned below the top cantilevered conductor. The second insulator layer has at least one opening that exposes a conducting area of the at least one contact conductor within the second insulator layer. At least one actuation conductor is electrically insulated from the at least one contact conductor such that application of at least one actuation voltage to the at least one actuation conductor moves the top cantilevered conductor downwardly towards the at least one contact conductor for making an electrical connection between the top cantilevered conductor and the at least one contact conductor.

Claims

1. A MEMS switch, comprising:

a top cantilevered conductor that moves downwardly;

at least one first insulator layer positioned below the top cantilevered conductor;

at least one second insulator layer positioned below the at least one first insulator layer such that at least one gap is formed between the top cantilevered conductor and the at least one second insulator layer, said gap having a thickness in the range 0.5 Å

to 100 Å

when the top cantilevered conductor is at rest, wherein the thickness of the at least one gap decreases when the top cantilevered conductor is moved downwardly;

at least one contact conductor positioned below the top cantilevered conductor, wherein said second insulator layer has at least one opening that exposes a conducting area of the at least one contact conductor within the second insulator layer; and

at least one actuation conductor electrically insulated from the at least one contact conductor, wherein application of at least one actuation voltage to the at least one actuation conductor moves the top cantilevered conductor downwardly towards the at least one contact conductor for making an electrical connection between the top cantilevered conductor and the at least one contact conductor.

2. The switch of claim 1, wherein at least one of the first insulator layer or the at least one second insulator layer comprise at least one of silicon oxide, silicon nitride or low-k material (what is a low-k material? examples).

3. The switch of claim 1, further comprising at least one third insulator layer that insulates the bottom conductor from a carrier of MEMS device.

4. The switch of claim 3, wherein the carrier material comprises at least one of silicon, gallium arsenide, glass, quartz or sapphire.

5. The switch of claim 1, wherein the top cantilevered conductor comprises at least one of gold, tungsten, copper, aluminum or polysilicon.

7. The switch of claim 1, wherein at least one of the first insulator layer or the at least one second insulator layer comprise at least one of silicon oxide, silicon nitride or low-k material (what is a low-k material? examples).

8. The switch of claim 1, further comprising at least one third insulator layer that insulates the bottom conductor from a carrier of MEMS device.

9. The switch of claim 3, wherein the carrier material comprises at least one of silicon, gallium arsenide, glass, quartz or sapphire.

10. The switch of claim 1, wherein the top cantilevered conductor comprises at least one of gold, tungsten, copper, aluminum or polysilicon.

6. A MEMS switch, comprising:

a top cantilevered conductor that moves laterally;

at least one first insulator layer positioned below the top cantilevered conductor;

at least one diffusion layer positioned below the at least one first insulator layer such that at least one gap is formed between the top cantilevered conductor and the at least one diffusion layer, said gap having a thickness in the range 0.5 Å

to 100 Å

when the top cantilevered conductor is at rest;

at least one contact conductor positioned on at least one lateral side of the top cantilevered conductor, and

at least one actuation conductor electrically insulated from the at least one contact conductor, wherein application of at least one actuation voltage to the at least one actuation conductor moves the top cantilevered conductor laterally towards the at least one contact conductor.