ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURING THEREOF

• US 20130140542A1
• Filed: 01/16/2013
• Published: 06/06/2013
• Est. Priority Date: 08/06/2010
• Status: Active Grant

• Current Assignee: JDI Design and Development GK
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: HARADA, Kenji, NISHIYAMA, Seiji, KOMATSU, Takahiro, TAKEUCHI, Takayuki, FUJIMURA, Shinya, OHUCHI, Satoru, FUJITA, Hirofumi, TSUKAMOTO, Yoshiaki
• Granted Patent: US 9,048,448 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/8051 Anodes

Abstract

An organic EL element comprises: an anode; a cathode; a functional layer including at least a light-emitting layer; a hole injection layer disposed between the anode and the functional layer; and a bank. The hole injection layer contains tungsten oxide. Tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six. The hole injection layer includes a crystal of the tungsten oxide. A particle diameter of the crystal is on an order of nanometers. The hole injection layer has a recessed portion whose inner side surface has an upper edge that is one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.

Claims

1. An organic EL element, comprising:

an anode;

a cathode;

a functional layer that is disposed between the anode and the cathode and includes at least a light-emitting layer made of an organic material;

a hole injection layer disposed between the anode and the functional layer; and

a bank that defines a region in which the light-emitting layer is to be formed, wherein

the hole injection layer contains tungsten oxide,

tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six,

the hole injection layer includes a crystal of the tungsten oxide, a particle diameter of the crystal being on an order of nanometers,

the hole injection layer has a recessed portion in an upper surface thereof at the region defined by the bank,

the recessed portion has (i) an inner bottom surface that is in contact with a bottom surface of the functional layer, and (ii) an inner side surface that is continuous with the inner bottom surface and in contact at least with part of a side surface of the functional layer, and

the inner side surface of the recessed portion has a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.

2. The organic EL element of claim 1, wherein

the tungsten atoms with a valence less than six are tungsten atoms with a valence of five.

3. The organic EL element of claim 2, wherein

a ratio W⁵⁺/W⁶⁺ of the number of the tungsten atoms with a valence of five to the number of the tungsten atoms with a valence of six is at least 3.2%.

4. The organic EL element of claim 3, wherein

the ratio W⁵⁺/W⁶⁺ is at least 3.2% and at most 7.4%.

5. The organic EL element of claim 1, wherein

a hard X-ray photoelectron spectroscopy spectrum of a surface of the hole injection layer exhibits a first peak and a second peak, the first peak corresponding to a 4f_7/2 energy level of the tungsten atoms with a valence of six, and the second peak being in a region lower than the first peak in terms of binding energy.

6. The organic EL element of claim 5, wherein

the second peak is in a region between 0.3 electron volts and 1.8 electron volts lower, in terms of binding energy, than the first peak.

7. The organic EL element of claim 5, wherein

an area intensity of the second peak is between 3.2% and 7.4% of an area intensity of the first peak.

8. The organic EL element of claim 1, wherein

the tungsten atoms with a valence less than six cause a band structure of the hole injection layer to have an occupied energy level in a range between 1.8 electron volts and 3.6 electron volts lower than a lowest energy level of a valence band in terms of binding energy.

9. The organic EL element of claim 1, wherein

the hole injection layer includes a plurality of crystals of the tungsten oxide, each of the crystals having a particle diameter of between 3 nm and 10 nm.

10. The organic EL element of claim 1, wherein

regular linear structures at intervals of between 1.85 angstroms and 5.55 angstroms appear in a lattice image by transmission electron microscopy observation of the hole injection layer.

11. The organic EL element of claim 10, wherein

in a 2D Fourier transform image of the lattice image, a pattern of concentric circles centering on a center point of the 2D Fourier transform image appears.

12. The organic EL element of claim 11, wherein

in a plot of distance from the center point versus normalized luminance, the normalized luminance being a normalized value of the luminance of the 2D Fourier transform image at the corresponding distance, at least one peak of the normalized luminance appears.

13. The organic EL element of claim 12, wherein

with a peak width being a difference between the distance corresponding to a position of a peak of the normalized luminance appearing closest to the center point in the plot and the distance corresponding to a position at which the peak of the normalized luminance begins to rise,

the peak width is less than 22 when a difference between the distance corresponding to the center point and the distance corresponding to the peak of the normalized luminance appearing closest to the center point is 100.

14. The organic EL element of claim 1, wherein

the functional layer includes amine-containing material.

15. The organic EL element of claim 1, wherein

the functional layer further includes one of a hole transfer layer that transfers holes and a buffer layer that adjusts optical characteristics and/or blocks electrons.

16. The organic EL element of claim 1, wherein

the bank is liquid-repellent, and the hole injection layer is liquid-philic.

17. An organic EL panel comprising the organic EL element of claim 1.

18. An organic EL light-emitting apparatus comprising the organic EL element of claim 1.

19. An organic EL display apparatus comprising the organic EL element of claim 1.

20. A manufacturing method of an organic EL element, comprising the steps of:

preparing an anode;

forming a tungsten oxide layer on the anode using a sputtering gas including argon gas and oxygen gas and using tungsten as a sputtering target, under film forming conditions such that a total pressure of the sputtering gas is at least 2.3 Pa and at most 7.0 Pa, a partial pressure of the oxygen gas in the sputtering gas is at least 50% and at most 70%, an input power density per unit area of the sputtering target is at least 1.5 W/cm² and at most 6.0 W/cm², and a value yielded by dividing the total pressure of the sputtering gas by the input power density is larger than 0.7 Pa·

cm²/W;

forming a bank above the tungsten oxide layer by forming a resist film including a resist material above the tungsten oxide layer and etching the resist film with a developing solution;

after the formation of the bank, forming a hole injection layer by cleaning residuals of the resist film that adhere to the tungsten oxide layer with a cleaning liquid and dissolving part of the tungsten oxide layer with the cleaning liquid, the hole injection layer having a recessed portion in an upper surface thereof at a region defined by the bank, the recessed portion having an inner bottom surface and an inner side surface continuous with the inner bottom surface;

forming a functional layer by coating the inner bottom surface and the inner side surface of the recessed portion of the hole injection layer with ink by ejecting drops of the ink into the region defined by the bank and drying the ink; and

forming a cathode above the functional layer, wherein

in the formation of the hole injection layer, the inner side surface of the recessed portion is formed to be in contact with at least part of a side surface of the functional layer and to have a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.

22. The manufacturing method of claim 20, wherein

the tungsten oxide layer is formed so that tungsten atoms constituting the tungsten oxide layer include both tungsten atoms with a maximum valence thereof and tungsten atoms with a valence less than the maximum valence, and so as to include a tungsten oxide crystal having a particle diameter on an order of nanometers.

23. The manufacturing method of claim 20, wherein

in the formation of the tungsten oxide layer, the value yielded by dividing the total pressure of the sputtering gas by the input power density is less than 3.2 Pa·

cm²/W.

21. A manufacturing method of an organic EL element, comprising the steps of:

preparing an anode;

forming a tungsten oxide layer on the anode using a sputtering gas including argon gas and oxygen gas and using tungsten as a sputtering target, under film forming conditions such that a total pressure of the sputtering gas is at least 2.3 Pa and at most 7.0 Pa, a partial pressure of the oxygen gas in the sputtering gas is at least 50% and at most 70%, an input power density per unit area of the sputtering target is at least 1.5 W/cm² and at most 6.0 W/cm², and a value yielded by dividing the total pressure of the sputtering gas by the input power density is larger than 0.7 Pa·

cm²/W;

forming a bank above the tungsten oxide layer by forming a resist film including a resist material above the tungsten oxide layer and etching the resist film with a developing solution, and forming a hole injection layer by cleaning residuals of the resist film that adhere to the tungsten oxide layer with the developing solution and dissolving part of the tungsten oxide layer with the developing solution, the hole injection layer having a recessed portion in an upper surface thereof at a region defined by the bank, the recessed portion having an inner bottom surface and an inner side surface continuous with the inner bottom surface;

forming a functional layer by coating the inner bottom surface and the inner side surface of the recessed portion of the hole injection layer with ink by ejecting drops of the ink into the region defined by the bank and drying the ink; and

forming a cathode above the functional layer, wherein

in the formation of the hole injection layer, the inner side surface of the recessed portion is formed to be in contact with at least part of a side surface of the functional layer and to have a lower edge and an upper edge, the lower edge being continuous with the inner bottom surface, and the upper edge being one of (i) aligned with part of a lower edge of the bank, the part being in contact with the light-emitting layer, and (ii) in contact with a bottom surface of the bank.