LIGHT EMITTING DIODE
First Claim
1. A light emitting diode, comprising:
- a substrate having an epitaxial growth surface and a light emitting surface opposite the epitaxial growth surface;
a first semiconductor layer having a first surface contacting the substrate and a second surface opposite to the first surface, the first surface;
an active layer stacked on the second surface of the first semiconductor layer;
a second semiconductor layer stacked on the active layer;
a first electrode electrically connected with the first semiconductor layer;
a second electrode electrically connected with and covering the surface of the second semiconductor layer away from the active layer; and
a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and on the light emitting surface, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove.
1 Assignment
0 Petitions
Accused Products
Abstract
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.
-
Citations
20 Claims
-
1. A light emitting diode, comprising:
-
a substrate having an epitaxial growth surface and a light emitting surface opposite the epitaxial growth surface; a first semiconductor layer having a first surface contacting the substrate and a second surface opposite to the first surface, the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with and covering the surface of the second semiconductor layer away from the active layer; and a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and on the light emitting surface, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A light emitting diode, comprising:
-
a substrate having an epitaxial growth surface and a light emitting surface opposite the epitaxial growth surface; a first semiconductor layer having a first surface contacting the substrate and a second surface opposite to the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with and covering a surface of the second semiconductor layer away from the active layer; and a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and a surface of the second semiconductor layer away from the active layer, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. - View Dependent Claims (17, 18)
-
-
19. A light emitting diode, comprising:
-
a substrate having an epitaxial growth surface and a light emitting surface opposite the epitaxial growth surface; a first semiconductor contacting the substrate; an active layer stacked on the substrate; a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with and covering the second semiconductor layer; and a plurality of three-dimensional nano-structures located on at least one surface of the active layer, and on at least one of the light emitting surface and a surface of the second semiconductor layer away from the active layer, wherein a cross section of each of the plurality of three-dimensional nano-structure is M-shaped. - View Dependent Claims (20)
-
Specification