LIGHT EMITTING DIODE

• US 20130140596A1
• Filed: 05/23/2012
• Published: 06/06/2013
• Est. Priority Date: 12/03/2011
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: ZHU, ZHEN-DONG, LI, QUN-QING, ZHANG, LI-HUI, CHEN, MO, FAN, SHOU-SHAN
• Granted Patent: US 8,796,716 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Claims

1. A light emitting diode, comprising:

a first semiconductor layer comprising a first surface and a second surface opposite to the first surface;

an active layer stacked on the second surface of the first semiconductor layer;

a second semiconductor layer stacked on the active layer;

a first electrode covering and contacting the first surface of the first semiconductor layer;

a second electrode electrically connected with the second semiconductor layer; and

a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove.

2. The light emitting diode of claim 1, wherein each of the plurality of three-dimensional nano-structures is a bar-shaped protruding structure extending along a straight line, a curve line, or a polygonal line.

3. The light emitting diode of claim 1, wherein a cross-section of each of the plurality of three-dimensional nano-structures is M-shaped.

4. The three-dimensional nano-structure array of claim 1, wherein the first peak comprises a first surface and a second surface intersecting with each other to form a first include angle, the second peak comprises a third surface and a fourth surface intersecting with each other to form a second include angle, and both the first include angle and the second include angle range from about 30 degrees to about 90 degrees.

5. The light emitting diode of claim 4, wherein a cross-section of the first peak has a shape of a trapezoid or a triangle, and a cross-section of the second peak has a shape of a trapezoid or a triangle.

6. The light emitting diode of claim 1, wherein a surface of the active layer is engaged with the plurality of three-dimensional nano-structures.

7. The light emitting diode of claim 1, wherein the depth of the first groove ranges from about 30 nanometers to about 120 nanometers, and the depth of the second groove ranges from about 100 nanometers to about 200 nanometers.

8. The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is aligned side by side and extends to form a plurality of concentric circles or concentric rectangles.

9. The light emitting diode of claim 1, wherein the plurality of the three-dimensional nano-structures is periodically aligned, and a period of the plurality of the three-dimensional nano-structures ranges from about 100 nanometers to about 500 nanometers.

10. The light emitting diode of claim 1, wherein a distance between the each two adjacent three-dimensional nano-structures ranges from about 0 nanometers to about 200 nanometers.

11. The light emitting diode of claim 1, wherein a width of the plurality of three-dimensional nano-structures ranges from about 100 nanometers to about 300 nanometers.

12. The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures and the first semiconductor layer are integrated into an integrated structure.

13. The light emitting diode of claim 1, further comprising a reflector located on a surface of the first semiconductor layer away from the active layer.

14. A light emitting diode, comprising:

a first semiconductor having a first surface and a second surface opposite to the first surface;

an active layer stacked on the second surface of the first semiconductor layer;

a second semiconductor layer stacked on the active layer;

a first electrode covering and contacting the first surface of the first semiconductor layer;

a second electrode electrically connected with the second semiconductor layer; and

a plurality of three-dimensional nano-structures located on the second surface of the first semiconductor layer and aligned side by side, wherein a cross section of each of the plurality of three-dimensional nano-structure is M-shaped, the active layer is engaged with the plurality of M-shaped three-dimensional nano-structures.

15. The light emitting diode of claim 14, wherein the plurality of three-dimensional nano-structures are protruding structures aligned side by side.

16. A light emitting diode, comprising:

a first semiconductor having a first surface and a second surface opposite to the first surface;

an active layer stacked on the second surface of the first semiconductor layer;

a second semiconductor layer stacked on the active layer;

a first electrode covering and contacting the entire first surface of the first semiconductor layer;

a second electrode electrically connected with the second semiconductor layer; and

a plurality of the first three-dimensional nano-structures located on the second surface of the first semiconductor layer and aligned side by side, a plurality of the second three-dimensional nano-structures located on the surface of the active layer away from the first semiconductor layer, wherein a cross section of each of the plurality of the first three-dimensional nano-structure is M-shaped, and a cross section of each of the plurality of the second dimensional nano-structure is M-shaped.

17. The light emitting diode of claim 16, wherein the active layer is engaged with the plurality of the first M-shaped three-dimensional nano-structures, and the second semiconductor layer is engaged with the plurality of the second M-shaped three-dimensional nano-structures.

18. The light emitting diode of claim 16, wherein the distribution and alignment of the plurality of the first semiconductor nano-structures is the same as the distribution and alignment of the plurality of the second semiconductor nano-structures.

19. The light emitting diode of claim 18, wherein the plurality of the first three-dimensional nano-structures extends substantially along a first direction, the plurality of the second three-dimensional nano-structures extends substantially along a second direction, and the first direction is parallel with the second direction.