SYSTEMS AND METHODS OF AUTOMATIC BOUNDARY CONTROL FOR SEMICONDUCTOR PROCESSES

• US 20130144423A1
• Filed: 12/06/2011
• Published: 06/06/2013
• Est. Priority Date: 12/06/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: MOU, Jong-I, LIN, Chin-Hsiang, HSU, Chih-Wei, WU, Mei-Jen, TSEN, Yen-Di, WANG, Jo Fei
• Granted Patent: US 9,250,619 B2
• Time in Patent Office: Days
• US Class Current: 700/121
• CPC Class Codes: G05B 19/18 Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form G05B19/418 takes precedence
• CPC Class Codes: G05B 2219/45031 Manufacturing semiconductor wafers
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.

Claims

1. A method of automatically calculating boundaries for a semiconductor fabrication process, comprising:

selecting a first parameter for monitoring during a semiconductor fabrication process;

receiving a first set of values for the first parameter;

determining a group value of the first set;

normalizing each value in the first set of values;

selecting a first weighting factor based on a number of values in the first set;

generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set; and

applying the first and second boundary values to control the semiconductor fabrication process.

2. The method of claim 1, further comprising:

determining the standard deviation of the normalized values in the first set; and

generating the first and the second boundary values as a function of the standard deviation of the first set normalized values.

3. The method of claim 1, wherein the group value is an average value.

4. The method of claim 3, wherein the first parameter comprises an active parameter.

5. The method of claim 4, wherein the step of normalizing each value in the first set of values further comprises:

determining an offset to zero the average value of the first set; and

adjusting each value in the first set of values based on the offset.

6. The method of claim 5, further comprising:

selecting the first parameter for monitoring in an element from the group consisting of a device, a component, a machine, a subsystems and a system;

receiving the first set of values for the first parameter in the element; and

applying the first and second boundary values to control the semiconductor fabrication process in the element.

7. The method of claim 6, further comprising:

determining an average value in the element for the values in the first set; and

wherein generating the first and second boundary values involves computing;

σ

_L=√

((σ

<sub>L—

normalized</sub>)²+(σ

<sub>element—

mean</sub>)²), wherein σ

_L denotes an overall standard deviation for the first set values, σ

<sub>L—

normalized</sub> denotes the standard deviation of the first set normalized values, σ

<sub>element—

mean</sub> denotes the standard deviation of the average value in the element for the values in the first set.

8. The method of claim 7, wherein the step of generating the first and second boundary values further comprises:

multiplying the first weighting factor by the overall standard deviation for the first set values; and

generating the first and second boundary values as a function of the result of the multiplying step and the average value of the first set.

9. The method of claim 8, wherein the number of values in the first set comprises a number from 10 to 19, or a number from 20 to 29, or a number at least 30.

10. The method of claim 9, wherein the first weighting factor is 6 if the number of values in the first set comprises a number from 10 to 19, the first weighting factor is 5 if the number of values in the first set comprises a number from 20 to 29, and the first weighting factor is 4 if the number of values in the first set comprises a number at least 30.

11. The method of claim 1, further comprising:

receiving a second set of values for the first parameter in a process chamber;

determining a group value of the second set;

selecting a second weighting factor based on a number of values in the second set;

generating a third and a fourth boundary value as a function of the second weighting factor, the second set of values and the group value of the second set; and

applying the third and fourth boundary values to control the semiconductor fabrication process in the process chamber.

12. The method of claim 11, wherein the number of values in the second set is at least 30 and the second weighting factor is 4.

13. The method of claim 1, further comprising:

selecting a second parameter for monitoring during the semiconductor fabrication process;

receiving a first set of values for the second parameter;

determining a target value for the first set of second parameter values;

normalizing each value in the first set of second parameter values;

selecting the first weighting factor based on a number of values in the first set of second parameter values;

generating a third and a fourth boundary value as a function of the first weighting factor, the normalized values in the first set of second parameter values and the target value for the first set of second parameter values; and

applying the third and fourth boundary values to control the semiconductor fabrication process.

14. The method of claim 13, wherein the second parameter comprises a passive parameter.

15. The method of claim 1, further comprising:

determining a minimum and a maximum boundary value for the first parameter; and

applying the first and second boundary values to control the semiconductor fabrication process only if the first and second boundary values are less than the maximum boundary value and more than the minimum boundary value.

16. A computer readable storage medium having instructions stored tangibly thereon, the instructions when executed by a processor causing the processor to perform the operations of:

selecting a first parameter for monitoring during a semiconductor fabrication process;

receiving a first set of values for the first parameter;

determining a group value of the first set;

normalizing each value in the first set of values;

selecting a first weighting factor based on a number of values in the first set;

generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set; and

applying the first and second boundary values to control the semiconductor fabrication process.

17. The computer readable storage medium of claim 16, wherein the instructions when executed by the processor cause the processor to further perform the operations of:

selecting a second parameter for monitoring during the semiconductor fabrication process;

receiving a first set of values for the second parameter;

determining a target value for the first set of second parameter values;

normalizing each value in the first set of second parameter values;

selecting the first weighting factor based on a number of values in the first set of second parameter values;

generating a third and a fourth boundary value as a function of the first weighting factor, the normalized values in the first set of second parameter values and the target value for the first set of second parameter values; and

applying the third and fourth boundary values to control the semiconductor fabrication process.

18. The computer readable storage medium of claim 17, wherein the first parameter comprises an active parameter and the second parameter comprises a passive parameter.

19. The computer readable storage medium of claim 16, wherein the instructions when executed by the processor cause the processor to further perform the operations of:

receiving a second set of values for the first parameter in an element from the group consisting of a device, a component, a machine, a subsystems and a system;

determining a group value of the second set;

selecting a second weighting factor based on a number of values in the second set;

generating a third and a fourth boundary value as a function of the second weighting factor, the second set values and the group value of the second set; and

applying the third and fourth boundary values to control the semiconductor fabrication process in the element.

20. A system for automatically calculating boundaries for a semiconductor fabrication process, comprising:

a monitoring device to monitor a selected first parameter during a semiconductor fabrication process;

a data determining device to determine a group value of a first set of values for the first parameter;

a data normalizer to normalize each value in the first set of values;

a counter to determine a number of values in the first set

a generator to generate a first and a second boundary value as a function of a selected first weighting factor, the first set normalized values and the group value of the first set; and

an interface to apply the first and second boundary values to a controller to control performance of at least a portion of the semiconductor fabrication process.