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Trench-Gate Resurf Semiconductor Device and Manufacturing Method

  • US 20130146967A1
  • Filed: 10/24/2012
  • Published: 06/13/2013
  • Est. Priority Date: 12/07/2011
  • Status: Active Grant
First Claim
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1. A trench-gate semiconductor device, comprising:

  • a drain contact;

    a silicon semiconductor body over the drain contact which is doped with a first type of dopant;

    a gate trench formed in the top of the semiconductor body;

    a gate dielectric lining the gate trench;

    a gate electrode formed in the gate trench;

    source regions formed in the semiconductor body on opposite sides of the gate trench, separated from the gate electrode by the gate dielectric; and

    an implant well on each side of the gate trench, doped with a second type of dopant, of opposite polarity type to the first type of dopant of the semiconductor body, and extending more deeply into the semiconductor body than the gate trench,wherein the device further comprises a pillar region extending downwardly from the bottom of the gate trench and which is electrically connected to the source regions, doped with the second type of dopant beneath the gate trench between the implant wells.

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