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LOGIC CIRCUIT

  • US 20130147519A1
  • Filed: 02/07/2013
  • Published: 06/13/2013
  • Est. Priority Date: 10/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a logic circuit comprising;

    a first transistor comprising a first gate electrode, a first electrode, and a second electrode;

    a second transistor comprising a second gate electrode, the second electrode, and a third electrode;

    a first terminal electrically connected to the second gate electrode; and

    a second terminal electrically connected to a portion where the second transistor is connected to the first transistor,wherein a high power supply voltage terminal is electrically connected to the first electrode;

    wherein a low power supply voltage terminal is electrically connected to the third electrode,wherein the first transistor comprises;

    the first gate electrode;

    a gate insulating layer over the first gate electrode;

    a first oxide semiconductor layer over the gate insulating layer;

    the first electrode which is electrically connected to the first oxide semiconductor layer; and

    the second electrode which is electrically connected to the first oxide semiconductor layer,wherein the second transistor comprises;

    the second gate electrode;

    the gate insulating layer over the second gate electrode;

    a second oxide semiconductor layer over the gate insulating layer;

    the second electrode which is electrically connected to the second oxide semiconductor layer; and

    the third electrode which is electrically connected to the second oxide semiconductor layer,wherein a layer comprising oxygen and comprising silicon or aluminum is on the second oxide semiconductor layer, andwherein a resistance of the second oxide semiconductor layer is lower than a resistance of the first oxide semiconductor layer.

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