INTEGRATED PLASMONIC NANOCAVITY SENSING DEVICE

• US 20130148126A1
• Filed: 04/06/2011
• Published: 06/13/2013
• Est. Priority Date: 04/06/2010
• Status: Active Grant

• Current Assignee: FOM Institute for Atomic and Molecular Physics
• Original Assignee: Integrated Plasmonics Corp.
• Inventors: Schmitz, Jurriaan, Polman, Albert, Walters, Robert, Brunets, Ihor
• Granted Patent: US 8,848,194 B2
• Time in Patent Office: Days
• US Class Current: 356/445
• CPC Class Codes: B01L 2300/0654 Lenses; Optical fibres
• CPC Class Codes: B01L 2300/0663 Whole sensors
• CPC Class Codes: B01L 3/502715 characterised by interfacing components, e.g. fluidic, electrical, optical or mechanical interfaces
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01N 2021/7776 Index
• CPC Class Codes: G01N 2021/7786 Fluorescence
• CPC Class Codes: G01N 2021/7789 Cavity or resonator
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/554 detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
• CPC Class Codes: G01N 21/6454 using an integrated detector array
• CPC Class Codes: G01N 21/648 using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
• CPC Class Codes: G01N 21/6489 Photoluminescence of semiconductors
• CPC Class Codes: G01N 21/7746 the waveguide coupled to a cavity resonator
• CPC Class Codes: G02B 6/1226 involving surface plasmon interaction
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body

Abstract

An integrated plasmonic sensing device is described wherein the integrated device comprises: at least one optical source comprising a first conductive layer and a second conductive layer, and a optical active layer between at least part of said first and second conductive layers; at least one nanocavity extending through said first and second conductive layers and said optical active layer, wherein said optical source is configured to generate surface plasmon modes suitable for optically activating one or more resonances in said nanocavity; and, at least one optical detector comprising at least one detection region formed in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense optically activated resonances in said nanocavity.

Claims

1. An integrated plasmonic sensing device comprising:

a plasmonic waveguide disposed on a substrate, said plasmonic waveguide comprising a first conductive layer and a second conductive layer and a dielectric layer between said first and second conductive layer, wherein at least part of said dielectric layer is configured as an optical source for exciting surface plasmon modes supported by said waveguide;

at least one nanocavity extending through said first and second conductive layers and said dielectric layer, wherein said waveguide is configured to couple said surface plasmon modes to said nanocavity for activating one or more localized plasmon resonances in said nanocavity; and

,

at least one optical detector comprising at least one detection region formed on or in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense said one or more localized plasmon resonances in said nanocavity.

2. Integrated plasmonic sensing device according to claim 1, wherein electromagnetic fields supported by said nanocavity at resonance extend at least a part into the detection region of said detector.

3. Integrated plasmonic sensing device according to claim 1, wherein said first and second conductive layer is formed out of a metal, preferably selected from the group comprising aluminum, silver, copper and gold and/or alloys thereof.

4. Integrated plasmonic sensing device according to claim 1, wherein said optical source includes an optical active layer optically activated nanocrystals and/or defect centers, preferably said nanocrystals and/or defect centers being embedded in a silica or alumina host.

5. Integrated plasmonic sensing device according to claim 1, wherein said detecting region comprises at least one depleted semiconducting region, preferably a pn type junction and/or a Schottky type junction.

6. Integrated plasmonic sensing device according to claim 1, wherein the geometry of at least part of said at least one nanocavity comprises a substantially rectangular cavity, an annular cavity and/or combinations thereof.

7. Integrated plasmonic sensing device according to claim 1 further comprising:

one or more integrated electronic circuits comprising one or more electronic devices formed in n-type or p-type wells, preferably CMOS-type integrated electronic circuits, said one or more integrated electronic circuits being configured for driving said optical source and/or said optical detector and/or for processing one or more detector signals originating from said at least one optical detector.

8. Integrated plasmonic sensing device according to claim 7, wherein at least one or more parts of said first and/or second conductive layers are used as metal interconnect areas for electrically connecting said optical source to said one or more integrated electronic circuits.

9. Integrated plasmonic sensing device according to claim 7, wherein said one or more integrated electronic circuits are configured to operate said optical source and/or said optical detector.

10. Integrated plasmonic sensing device according to claim 7, wherein at least part of said integrated electronic device is circuits are configured to produce an output signal which is determined on the basis of a first detector signal measured without activating the optical source and a second detector signal measured when activating the optical source.

11. Integrated plasmonic sensing device according to claim 1, wherein, when in use, a change in material composition within the nanocavity results in a change in efficiency of power transfer between the optical source and the detector;

or, wherein, when in use, a geometric change in the nanocavity results in change in efficiency of power transfer between the optical source and the optical detector when an external stimulus is applied.

12. Integrated plasmonic sensing device according to claim 1, wherein a quantity of material that responds to an applied secondary stimulus is placed within the nanocavity to facilitate sensing of such a secondary stimuli.

13. Integrated plasmonic sensing device according to claim 1, wherein when a quantity of material that absorbs power from the optical source and later transfers power to the detector is placed within the nanocavity.

14. Integrated plasmonic sensing device according to claim 1, wherein the thickness of said optical active layer is selected such that a single propagating guided plasmon mode is supported.

15. A plasmonic sensor pixel array, comprising a plurality of plasmonic pixel sensors, each plasmonic pixel sensor comprising at least part of an integrated plasmonic sensing device according to claim 1.

16. A plasmonic sensor pixel array according to claim 15 further comprising:

one or more dielectric layers formed over at least part of said plasmonic pixel sensors, said one or more dielectric layers comprising one or more micro-channels in contact with at least part of nanocavities associated with said plasmonic pixels sensors, said micro-channels being configured to guide a fluid and/or gas into or through said nanocavities.