MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE

• US 20130152696A1
• Filed: 12/19/2011
• Published: 06/20/2013
• Est. Priority Date: 12/19/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Kalz, Franz-Peter, Theuss, Horst, Winkler, Bernhard, Hosseini, Khalil, Mahler, Joachim, Mengel, Manfred
• Granted Patent: US 9,021,887 B2
• Time in Patent Office: Days
• US Class Current: 73/777
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 2203/0154 Moulding a cap over the MEMS device
• CPC Class Codes: G01L 1/18 using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 19/02 Arrangements for preventing, or for compensating for, effects of inclination or acceleration of the measuring device; Zero-setting means for aneroid barometers G01L7/14
• CPC Class Codes: G01L 9/0072 using variations in capacitance
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 2924/3511 Warping

Abstract

Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Claims

1. Micromechanical semiconductor sensing device, comprising

a micromechanical sensing structure being configured to yield an electrical sensing signal, and

a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

2. Device according to claim 1, further comprising:

a compensation logic configured to compensate, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress.

3. Device according to claim 1,

wherein the micromechanical sensing structure comprises a capacitive pressure sensor with a movable diaphragm above a hollow space.

4. Device according to claim 1, wherein the micromechanical sensing structure comprises an acceleration sensing device with an inertial element inside a cavity, wherein the cavity is supported by a support structure.

5. Micromechanical semiconductor pressure sensing device, comprising

a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm, and

wherein at least one piezoresistive sensing device is buried in the diaphragm, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal.

6. Device according to claim 5, further comprising:

a compensation logic configured to compensate, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress

7. Method for manufacturing a micromechanical semiconductor sensing device, the method comprising:

structuring a micromechanical sensing structure configured to yield an electrical sensing signal, and

providing at least one piezoresistive sensing device in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

8. Method according to claim 7, wherein the micromechanical sensing structure is structured as a capacitive pressure sensor with a movable diaphragm above a hollow space.

9. Method according to claim 7, wherein the micromechanical sensing structure is structured as an acceleration sensing device with an inertial element inside a cavity, wherein the cavity is supported by a support structure.

10. Method for manufacturing a micromechanical semiconductor pressure sensing device, the method comprising:

structuring a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm, and

wherein at least one piezoresistive sensing device is buried in diaphragm, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

11. Micromechanical semiconductor sensing device, comprising

a micromechanical sensing structure being configured to yield an electrical sensing signal, and

a means for sensing a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal, wherein said means is provided in the micromechanical sensing structure.

12. Method for sensing an external force on a device, the method comprising:

simultaneously determining an electrical sensing signal describing the external force and an electrical disturbance signal describing mechanical stress on the device, the mechanical stress disturbing the electrical sensing signal; and

compensating based on the electrical disturbance signal a disturbance in the electrical sensing signal caused by the mechanical stress.