METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE

• US 20130153860A1
• Filed: 12/11/2012
• Published: 06/20/2013
• Est. Priority Date: 12/16/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Sang-woo, PARK, Hyun-kyu
• Granted Patent: US 10,680,176 B2
• Time in Patent Office: Days
• US Class Current: 257/14
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C01B 32/194 After-treatment
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02444 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/02653 Vapour-liquid-solid growth
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: H10K 71/10 : Deposition of organic active material
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy

Abstract

A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.

Claims

1. A method of forming a hybrid nanostructure on graphene, the method comprising:

providing a graphene layer on a substrate;

forming a metal layer on the graphene layer; and

chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.

2. The method of claim 1, wherein the forming of the graphene layer comprises:

growing the graphene layer on a catalyst layer via chemical deposition;

removing the catalyst layer from the graphene layer; and

transferring the graphene layer to the substrate.

3. The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers.

4. The method of claim 1, wherein the metal layer consists of gold.

5. The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950°

C.

6. The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire.

7. The method of claim 1, wherein the nanomaterial is a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, a metal, or a combination thereof.

8. The method of claim 1, wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer.

9. The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited.

10. A composite nanostructure comprising:

a substrate;

a graphene layer formed on the substrate; and

a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire.

11. The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure.

12. The composite nanostructure of claim 11, wherein the metal layer consists of gold.

13. The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the substrate.

14. The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof.

15. A nanoelectronic device comprising the composite nanostructure according to claim 10.

16. The nanoelectronic device of claim 15, further comprising a counter electrode layer spaced apart from the hybrid nanostructure.

17. The nanoelectronic device of claim 16, wherein the counter electrode layer comprises graphene, indium tin oxide, gold, platinum, indium zinc tin oxide, or combination thereof.

18. The nanoelectronic device of claim 15, wherein the nanoelectronic device is a direct current nanogenerator.

19. A hybrid nanostructure comprising:

a nanowall; and

a nanowire abutting the nanowall,

wherein the nanowall and the nanowire comprise a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, or a combination thereof; and

wherein a thickness of the nanowall is about 5 to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm.

20. The hybrid nanostructure of claim 19, further comprising a combination of a nanowall and a nanowire between both the nanowall and the nanowire, wherein the combination comprises a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, or a combination thereof.

21. The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 μ

m, the nanowire has a length of about 1 to about 100 μ

m, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel.