SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A semiconductor device comprising:
- a non-single-crystal oxide semiconductor film as a channel formation region,wherein the oxide semiconductor film has a density of higher than 6.0 g/cm3 and lower than 6.375 g/cm3.
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Abstract
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a non-single-crystal oxide semiconductor film as a channel formation region, wherein the oxide semiconductor film has a density of higher than 6.0 g/cm3 and lower than 6.375 g/cm3. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a gate insulating layer over a gate electrode layer; and a non-single-crystal oxide semiconductor film over the gate insulating layer, wherein the oxide semiconductor film has a density of higher than 6.0 g/cm3 and lower than 6.375 g/cm3. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising:
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a non-single-crystal oxide semiconductor film; a gate insulating layer over the oxide semiconductor film; and a gate electrode layer over the gate insulating layer, wherein the oxide semiconductor film has a density of higher than 6.0 g/cm3 and lower than 6.375 g/cm3. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device, comprising:
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depositing an oxide semiconductor film by a sputtering method using a polycrystalline sputtering target, wherein partial pressure of water in a deposition chamber in deposition is set to be lower than or equal to 10−
3 Pa. - View Dependent Claims (17, 18)
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Specification