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ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH AND A PROCESS OF FORMING THE SAME

  • US 20130153987A1
  • Filed: 12/15/2011
  • Published: 06/20/2013
  • Est. Priority Date: 12/15/2011
  • Status: Active Grant
First Claim
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1. An electronic device comprising:

  • a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of semiconductor layer to a first depth;

    a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench;

    a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure; and

    a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure.

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