ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH AND A PROCESS OF FORMING THE SAME
First Claim
1. An electronic device comprising:
- a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of semiconductor layer to a first depth;
a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench;
a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure; and
a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure.
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Accused Products
Abstract
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the thickness of semiconductor layer to a depth. The electronic device can further include a conductive structure within the trench, wherein the conductive structure extends at least approximately 50% of the depth of the trench. The electronic device can still further include a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the conductive structure; and an insulating layer disposed between the vertically-oriented doped region and the conductive structure. A process of forming an electronic device can include patterning a semiconductor layer to define a trench extending through at least approximately 50% of the thickness of the semiconductor layer and forming a vertically-oriented doped region after patterning the semiconductor layer to define the trench.
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Citations
20 Claims
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1. An electronic device comprising:
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a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of semiconductor layer to a first depth; a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench; a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure; and a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process of forming an electronic device comprising:
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forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface and a thickness; patterning the semiconductor layer to define a first trench extending through at least approximately 50% of the thickness of the semiconductor layer; forming a first insulating layer within the first trench; forming a vertically-oriented doped region within the semiconductor layer and extending from near the primary surface towards the substrate, wherein the vertically-oriented doped region is formed after patterning the semiconductor layer to define the first trench; and forming a first conductive structure within the first trench, wherein the first insulating layer is disposed between the semiconductor layer and the first conductive structure. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification