TRENCH GATE MOSFET DEVICE

• US 20130153999A1
• Filed: 12/20/2012
• Published: 06/20/2013
• Est. Priority Date: 12/20/2011
• Status: Abandoned Application

• Current Assignee: Chengdu Monolithic Power Systems Company Limited (Monolithic Power Systems Incorporated)
• Original Assignee: Chengdu Monolithic Power Systems Company Limited (Monolithic Power Systems Incorporated)
• Inventors: Zhang, Lei, Ma, Rongyao, Disney, Donald, Li, Tiesheng
• Application Number:
  US13/722,863
• Publication Number:
  US 20130153999A1
• Time in Patent Office: Days
• US Class Current: 257/334
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.

Claims

1. A trench gate MOSFET device, comprising:

a substrate, having a first conductivity type;

an epitaxy layer, formed on the substrate, the epitaxy layer having a top surface, wherein the epitaxy layer having the first conductivity type and the doping concentration of the epitaxy layer is lower than the doping concentration of the substrate;

a trench, extending downward from the top surface of the epitaxy layer, wherein the depth of the trench is smaller than the thickness of the epitaxy layer;

an insulation layer, filled into the trench, the insulation layer covering an internal surface of the trench;

a poly-silicon region, formed inside the trench and enclosed by the insulation layer;

a gate electrode, formed in the trench, the gate electrode extending downward from the top surface of the epitaxy, and the gate electrode enclosed by the insulation layer;

a pillar structure, formed in the epitaxy layer, the pillar structure having a second conductivity type;

a body region, formed in the epitaxy layer, the body region having the second conductivity type, wherein the body region contacts a side wall of the trench and a top surface of the pillar structure, and wherein the depth of the body region is smaller than the thickness of the gate electrodes, and further wherein the doping concentration of the body region is higher than the doping concentration of the pillar structure; and

a source contact region, formed on the body region and contacting the sidewall of the trench, wherein the source contact region having the first conductivity type and the doping concentration of the source contact region is higher than the doping concentration of the epitaxy layer.

2. The trench gate MOSFET device according to claim 1, wherein the poly-silicon region and the gate electrode are horizontally arranged in the trench.

3. The trench gate MOSFET device according to claim 1, wherein the poly-silicon region is beneath the gate electrode.

4. The trench gate MOSFET device according to claim 1, further comprising a source electrode, contacting the source contact region.

5. The trench gate MOSFET device according to claim 4, wherein the source electrode is further coupled to the poly-silicon region.

6. The trench gate MOSFET device according to claim 4, further comprising a heavy doping region formed in the body region, the heavy doping region having the second conductivity type, the heavy doping region contacting the source electrode, wherein the doping concentration of the heavy doping region is higher than the doping concentration of the body region.

7. The trench gate MOSFET device according to claim 1, wherein the substrate has a voltage applied on, and wherein if the first conductivity type is N-type, the poly-silicon region is coupled to a voltage lower than the voltage applied on the substrate, and wherein if the first conductivity type is P-type, the poly-silicon region is coupled to a voltage higher than the voltage applied on the substrate.

8. The trench gate MOSFET device according to claim 1, wherein the poly-silicon region comprises a plurality of poly-silicon region portions which are separated from each other, and wherein the poly-silicon region portions are vertically arranged in the trench.

9. The trench gate MOSFET device according to claim 1, wherein the pillar structure comprises a plurality of pillar structure portions which are separated from each other, and wherein the pillar structure portions are vertically arranged in the epitaxy layer.

10. A trench gate MOSFET device, comprising a plurality of trench gate MOSFET units, wherein each of the trench gate MOSFET unit comprises:

a substrate, having a first conductivity type;

an epitaxy layer, formed on the substrate, the epitaxy layer having a top surface, wherein the epitaxy layer having the first conductivity type and the doping concentration of the epitaxy layer is lower than the doping concentration of the substrate;

a trench, extending downward from the top surface of the epitaxy layer, wherein the depth of the trench is smaller than the thickness of the epitaxy layer;

an insulation layer, filled into the trench, the insulation layer covering an internal surface of the trench;

a poly-silicon region, formed inside the trench and enclosed by the insulation layer;

a gate electrode, formed in the trench, the gate electrode extending downward from the top surface of the epitaxy, and the gate electrode enclosed by the insulation layer;

a pillar structure, formed in the epitaxy layer, the pillar structure having a second conductivity type;

a body region, formed in the epitaxy layer, the body region having a second conductivity type, wherein the body region contacts a side wall of the trench and a top surface of the pillar structure, and wherein the depth of the body region is smaller than the thickness of the gate electrodes, and further wherein the doping concentration of the body region is higher than the doping concentration of the pillar structure; and

a source contact region, formed on the body region and contacting the sidewall of the trench, wherein the source contact region having the first conductivity type and the doping concentration of the source contact region is higher than the doping concentration of the epitaxy layer.

11. A trench gate MOSFET device, comprising:

a drain region, having a first conductivity type;

a drift region, formed on the drain region, having the first conductivity type;

a trench gate, formed in the drift region, the trench gate comprising a gate electrode and a poly-silicon region, wherein the depth of the trench gate is smaller than the thickness of the drift region;

a super junction pillar, juxtaposing the trench gate, the super junction pillar having a second conductivity type;

a body region, formed on the super junction pillar, the body region having the second conductivity type, wherein the body region contacts a sidewall of the trench gate; and

a source region, formed on the body region, the source region having the first conductivity type.

12. The trench gate MOSFET according to claim 11, wherein the super junction pillar comprises a plurality of super junction pillar portions vertically arranged in the drift region, wherein the super junction pillar portions are separated from each other.