SEMICONDUCTOR DEVICE INCLUDING POLYSILICON RESISTOR AND METAL GATE RESISTOR AND METHODS OF FABRICATING THEREOF
First Claim
1. A method, comprising:
- providing a semiconductor substrate;
forming a first gate structure on the semiconductor substrate;
forming a sacrificial gate structure on the semiconductor substrate adjacent the first gate structure; and
forming a dielectric layer overlying the first gate structure and the sacrificial gate structure, wherein the dielectric layer has a first thickness above a top surface of the first gate structure and a second thickness above a top surface of the sacrificial gate structure, wherein the second thickness is less than the first thickness.
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Abstract
A described method includes providing a semiconductor substrate. A first gate structure is formed on the semiconductor substrate and a sacrificial gate structure formed adjacent the first gate structure. The sacrificial gate structure may be used to form a metal gate structure using a replacement gate methodology. A dielectric layer is formed overlying the first gate structure and the sacrificial gate structure. The dielectric layer has a first thickness above a top surface of the first gate structure and a second thickness, less than the first thickness, above a top surface of the sacrificial gate structure. (See, e.g., FIGS. 5, 15, 26). Thus, a subsequent planarization process of the dielectric layer may not contact the first gate structure.
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Citations
20 Claims
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1. A method, comprising:
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providing a semiconductor substrate; forming a first gate structure on the semiconductor substrate; forming a sacrificial gate structure on the semiconductor substrate adjacent the first gate structure; and forming a dielectric layer overlying the first gate structure and the sacrificial gate structure, wherein the dielectric layer has a first thickness above a top surface of the first gate structure and a second thickness above a top surface of the sacrificial gate structure, wherein the second thickness is less than the first thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method, comprising:
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providing a substrate having a first surface; forming a recess in the substrate, thereby providing a recessed region having a second surface spaced a distance from the first surface; forming a polysilicon gate structure in the recess on the second surface; forming a sacrificial gate structure on the first surface; and forming a dielectric layer overlying the polysilicon gate structure and the sacrificial gate structure. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method, comprising:
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providing a substrate having a polysilicon layer; etching a recess in the polysilicon layer to provide a first portion having a first thickness and a second portion having a second thickness, the second thickness being less than the first thickness; after etching the polysilicon layer, patterning the polysilicon layer to form a first gate structure and a second gate structure, wherein the first gate structure is formed in the first portion of the polysilicon and the second gate structure is formed in the second portion of the polysilicon layer; removing the first gate structure to form an opening; and forming a metal gate structure in the opening. - View Dependent Claims (17, 18, 19, 20)
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Specification