FABRICATION SYSTEM OF CIGS THIN FILM SOLAR CELL EQUIPPED WITH REAL-TIME ANALYSIS FACILITIES FOR PROFILING THE ELEMENTAL COMPONENTS OF CIGS THIN FILM USING LASER-INDUCED BREAKDOWN SPECTROSCOPY

• US 20130158698A1
• Filed: 12/14/2011
• Published: 06/20/2013
• Est. Priority Date: 12/14/2011
• Status: Active Grant

• Current Assignee: Gwangju Institute of Science and Technology
• Original Assignee: Gwangju Institute of Science and Technology
• Inventors: JEONG, Sungho, LEE, Seokhee, SHIM, Hee-Sang
• Granted Patent: US 8,554,353 B2
• Time in Patent Office: Days
• US Class Current: 700/121
• CPC Class Codes: G01N 21/718 Laser microanalysis, i.e. with formation of sample plasma
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/03923 including AIBIIICVI compound materials, e.g. CIS, CIGS
• CPC Class Codes: H01L 31/0463 characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relatives to a fabrication processing system of CIGS thin film solar cell, more particularly to a fabrication processing system CIGS of thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy.

The system of the present invention is to provide a process control system for determining whether abnormalities are present or not by measuring a physical and chemical properties on a continuous production process lines of CIGS thin film solar cell in real time, and performing a production and quality management at the same time by providing a feedback to CIGS fabrication process.

Claims

1. A copper indium gallium selenide (CIGS) thin film solar cell fabrication process system comprising:

an object transfer section to continuously transfer a process object for fabrication of CIGS thin film solar cells;

a thin film fabrication process section to perform a CIGS thin film fabrication process on the process object during transfer;

at least one header including at least one laser irradiation sectional to radiate a laser beam to CIGS thin film manufactured by the thin film fabrication process section, at least one spectroscopy detection optical section to detect the spectroscopy from a plasma generated CIGS thin film by the irradiated laser beam, and a beam irradiation positioning section to adjust an irradiation position of the laser beam;

wherein the header is located above the CIGS thin film;

a header transfer section combined with a transfer path of the object and moving the header in the same speed and direction as a moving speed and a moving direction of the CIGS thin film manufactured by the thin film fabrication process section;

a spectroscopy information storage section in which a spectroscopy state information is stored;

a spectroscopy analyzing section connected electrically to the spectroscopy detection optical section to analyze a material distribution state within the CIGS thin film from the spectroscopy detected by the spectroscopy detection optical section based on the information stored in the spectroscopy information storage section;

a process control section connected to the spectroscopy analyzing section to control the thin film fabrication process section based on the material distribution state within the CIGS thin film analyzed by the spectroscopy analyzing section; and

a scribing section to pattern the CIGS thin film manufactured by the thin film fabrication process section.

2. The CIGS thin film solar cell fabrication process system of claim 1, wherein the laser irradiation section includes a laser section and an auto-focus section.

4. The CIGS thin film solar cell fabrication process system of claim 1, wherein the CIGS thin film fabrication process is CIGS deposition process.

8. The CIGS thin film solar cell fabrication process system of claim 1, wherein the beam irradiation positioning section is a galvanometer.

10. The CIGS thin film solar cell fabrication process system of claim 1, further comprising an index recognition optical section recognizing an index to trace a position that the laser beam is radiated.

12. The CIGS thin film solar cell fabrication process system of claim 1, wherein the scribing comprises a second scribing process.

14. The CIGS thin film solar cell fabrication process system of claim 1, wherein the control modifies a rate and distribution value of an element including CIGS thin film provide a feedback on the thin film fabrication process section.

3. (canceled)

5-7. -7. (canceled)

9. (canceled)

11. (canceled)

13. (canceled)

15. (canceled)

16. A copper indium gallium selenide (CIGS) thin film solar cell fabrication process system comprising:

an object transfer section to continuously transfer a process object for fabrication of CIGS thin film solar cells;

a thin film fabrication process section to perform a CIGS thin film fabrication process on the process object during transfer;

at least one header including a laser irradiation section for at least one scribing to radiate a laser beam to pattern CIGS thin film manufactured by the thin film fabrication process, at least a spectroscopy detection optical section to detect a spectroscopy from plasma generated from the CIGS thin film by the radiated laser beam, and a beam irradiation positioning section to adjust an irradiation position of the laser beam;

wherein the header is located above the CIGS thin film;

a header transfer section combined with a transfer path of the object and moving the header in the same speed and direction as a moving speed and a moving direction of the CIGS thin film manufactured by the thin film structure process section;

a spectroscopy information storage section in which a spectroscopy state information is stored;

a spectroscopy analyzing section to analyze a material distribution state within the CIGS thin film from the spectroscopy detected by the spectroscopy detection optical section based on the information stored in the spectroscopy information storage section; and

a process control section to control the thin film fabrication process section based on the material distribution state within the CIGS thin film analyzed by the spectroscopy analyzing section.

17. The CIGS thin film solar cell fabrication process system of claim 16, wherein the CIGS thin film fabrication process is CIGS deposition process.

19. The CIGS thin film solar cell fabrication process system of claim 16, wherein the beam irradiation positioning section is a galvanometer.

20. The CIGS thin film solar cell fabrication process system of claim 16, further comprising an index recognition optical section recognizing an index to trace a position that the laser beam is radiated.

21. The CIGS thin film solar cell fabrication process system of claim 16, wherein the scribing comprises a second scribing process.

22. The CIGS thin film solar cell fabrication process system of claim 16, wherein the control modifies a rate and distribution value of an element including CIGS thin film provide a feedback on the thin film fabrication process section.

18. (canceled)