DISPLAY DEVICE AND IMAGE DISPLAY SYSTEM EMPLOYING THE SAME

• US 20130161612A1
• Filed: 12/27/2012
• Published: 06/27/2013
• Est. Priority Date: 12/27/2011
• Status: Abandoned Application

• Current Assignee: InnoLux Corporation
• Original Assignee: Chi Mei Innolux Corporation (InnoLux Corporation), Innocom Technology (Shenzhen) Co., Ltd. (InnoLux Corporation)
• Inventors: KAKKAD, Ramesh, CHANG, Ching-Chao
• Application Number:
  US13/728,547
• Publication Number:
  US 20130161612A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

A display device and an image display system employing the same are provided. The display device includes a thin film transistor and a storage capacitor. The thin film transistor includes a channel. The storage capacitor includes a transparent metal electrode made of the same material as the channel, and a pixel electrode disposed on the transparent metal electrode electrically connected to the thin film transistor.

Claims

1. A display device, comprising:

a thin film transistor having a channel; and

a storage capacitor comprising;

a transparent metal electrode, wherein the transparent metal electrode is made of as the same material as the channel; and

a pixel electrode, disposed on the transparent metal electrode, electrically connecting to the thin film transistor.

2. The display device as claimed in claim 1, wherein the transparent metal electrode and the channel are disposed on the same layer.

3. The display device as claimed in claim 1, wherein the transparent metal electrode and the channel are simultaneously formed by patterning a transparent metal oxide layer via a photolithography process.

4. The display device as claimed in claim 1, wherein the transparent metal oxide layer comprises indium tin oxide, indium zinc oxide, indium tin zinc oxide, aluminum zinc oxide, gallium zinc oxide, or combinations thereof.

5. The display device as claimed in claim 1, wherein the display device further comprises a first contact, the first contact electrically connects to the transparent metal electrode.

6. The display device as claimed in claim 5, wherein the thin film transistor further comprises a gate electrode, and the gate electrode is made of as the same material as the first contact.

7. The display device as claimed in claim 6, wherein the gate electrode and the first contact are disposed on the same layer.

8. The display device as claimed in claim 6, wherein the gate electrode and the first contact are formed simultaneously by patterning a transparent metal oxide layer via a photolithography process.

9. The display device as claimed in claim 1, wherein the pixel electrode is comb-shaped, and the pixel electrode and the transparent metal electrode comprise a fringe-field switching mode electrode array structure.

10. An image display system, including:

the display device as claimed in claim 1; and

an input unit coupled to the display device and operative to provide input to the display device such that the display device displays images

11. The image display system as claimed in claim 10, wherein the image display system comprises a notebook computer, mobile phone, digital camera, personal data assistant, desktop computer, television, car display, or portable digital video disc player.