INTEGRATED MEMS DEVICE

• US 20130161702A1
• Filed: 12/25/2011
• Published: 06/27/2013
• Est. Priority Date: 12/25/2011
• Status: Abandoned Application

• Current Assignee: Windtop Technology Corp.
• Original Assignee: Windtop Technology Corp.
• Inventors: Chen, Kun-Lung
• Application Number:
  US13/337,150
• Publication Number:
  US 20130161702A1
• Time in Patent Office: Days
• US Class Current: 257/254
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
• CPC Class Codes: B81C 2203/0771 Stacking the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence
• CPC Class Codes: H04R 2201/003 Mems transducers or their use
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182

Abstract

An integrated MEMS device is provided, including, from bottom up, a bonding wafer layer, a bonding layer, an aluminum layer, a CMOS substrate layer defining a large back chamber area (LBCA), a small back chamber area (SBCA) and a sound damping path (SDP), a set of CMOS wells, a field oxide (FOX) layer, a set of CMOS transistor sources/drains, a first polysilicon layer forming CMOS transistor gates, a second polysilicon layer, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, and a gap control layer, an oxide layer, a first Nitride deposition layer, a metal deposition layer, a second Nitride deposition layer, an under bump metal (UBM) layer made of preferably Al/NiV/Cu and a plurality of solder spheres.

Claims

1. An integrated MEMS device, comprising, from bottom up:

a bonding wafer layer;

a bonding layer;

an aluminum layer;

a CMOS substrate layer defining, from the bottom up, a large back chamber area (LBCA), a small back chamber area (SBCA) and a sound damping path (SDP);

a field oxide (FOX) layer;

a first set of implant doped silicon areas;

a second set of implant doped silicon areas;

a first polysilicon layer;

a second polysilicon layer, said first polysilicon layer and said second polysilicon layer forming a bottom plate;

an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, and a gap control layer, wherein a first via hole layer of said plurality of via hole layers also acting as a bottom plate contact to contact said bottom plate, said gap control layer also acting as an etch stop layer to form a MEMS area above;

an oxide layer;

a first Nitride deposition layer;

a metal deposition layer;

a second Nitride deposition layer, said first Nitride deposition layer, said metal deposition layer and said second Nitride deposition layer forming a top plate, wherein said metal deposition also layer acting as top plate contact and MEMS metal contact to contact said top plate and MEMS metal layer respectively, said MEMS metal layer being a first metal layer of said plurality of embedded metal layers, said top plate having a dimple and a plurality of optional openings;

an under bump metal (UBM) layer; and

a plurality of solder spheres, said UBM layer and said solder spheres forming a flip chip bump layer;

wherein said first set of implant doped silicon areas forming CMOS wells, said second set of implant doped silicon areas forming CMOS transistor sources/drains, some areas of said first polysilicon layer forming CMOS transistor gates, and said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, said plurality of metal layers interleaved with said plurality of via hole layers collectively forming a scribe seal.

2. The integrated MEMS device as claimed in claim 1, wherein said bottom having a plurality of slots can function as a MEMS microphone.

3. The integrated MEMS device as claimed in claim 1, said CMOS transistor gate polysilicon, said capacitor polysilicon-insulator-polysilicon (PIP), or a combination of said transistor gate poly silicon with addition of said polysilicon without said insulator in said PIP capacitor module are used as MEMS microphone diaphragm when said MEMS device is fabricated to be a MEMS microphone.

4. The integrated MEMS device as claimed in claim 1, wherein said bottom without slots can function as a MEMS pressure sensor.

5. The integrated MEMS device as claimed in claim 1, wherein said (Re-Distribution layer (RDL) is used to connect MEMS signal to circuit input terminals so as to preserve integrity of said CMOS scribe seal without breaking the CMOS circuit seal rings and thus insure the CMOS reliability.

6. The integrated MEMS device as claimed in claim 1, wherein said dimple is formed with hole in said first Nitride layer and said second Nitride layer.

7. The integrated MEMS device as claimed in claim 1, wherein said bonding wafer layer further forms a plurality of hole as particle filters.

8. The integrated MEMS device as claimed in claim 3, wherein said oxide area of said CMOS circuit layer in said MEMS area is etched to stop at said gap control layer for adjusting the distance between said diaphragms and said top plates so as to change capacitance between said diaphragms and said top plates.

9. The integrated MEMS device as claimed in claim 1, wherein an interface area of said MEMS and said CMOS circuit layer is immersed in and surrounded by a scribe seal ring for protecting CMOS ASIC circuit reliability from external environmental impurity.

10. The integrated MEMS device as claimed in claim 9, wherein said CMOS ASIC circuits are built in between two scribe seal rings, one interfaces with said MEMS structure, the other interfaces with scribe line for die saw.

11. The integrated MEMS device as claimed in claim 1, wherein said Large Back Chamber Area (LBCA) is formed in CMOS substrate under said CMOS transistor so as to increase the sensitivity of said MEMS device.

12. The integrated MEMS device as claimed in claim 1, wherein said back chamber is formed by wafer bonding technique at the CMOS substrate, so that Wafer Level Package (WLP) is realized.

13. The integrated MEMS device as claimed in claim 10, wherein said wafer bonding materials are set so that laser die saw is realized.

14. The integrated MEMS device as claimed in claim 1, wherein a flip chip bumping WLP (Wafer Level Package) methodology is realized in MEMS devices for cost reduction.

15. The integrated MEMS device as claimed in claim 1, wherein design rules when using eutectic wafer bonding technology are set so that laser die saw is realized.

16. The integrated MEMS device as claimed in claim 1, wherein CMOS ASIC scribe line area is used as part of wafer bonding area.

17. The integrated MEMS device as claimed in claim 16, wherein said CMOS ASIC scribe line area is used for vertical mechanical support and forming vertical sidewalls of said back chamber.