METHOD FOR BONDING TWO SILICON SUBSTRATES, AND A CORRESPONDEING SYSTEM OF TWO SILICON SUBSTRATES
First Claim
1. A method for bonding two silicon substrates, the method comprising:
- providing a first silicon substrate and a second silicon substrate;
depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1% and 5% on a first bonding surface of the first silicon substrate;
depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate;
subsequently bonding the first silicon substrate and the second silicon substrate, so that the first bonding surface and the second bonding surface lie opposite each other; and
implementing a thermal treatment step to form a eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as main component, between the first silicon substrate and the second silicon substrate, spikes, which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.
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Accused Products
Abstract
A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.
6 Citations
14 Claims
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1. A method for bonding two silicon substrates, the method comprising:
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providing a first silicon substrate and a second silicon substrate; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1% and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently bonding the first silicon substrate and the second silicon substrate, so that the first bonding surface and the second bonding surface lie opposite each other; and implementing a thermal treatment step to form a eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as main component, between the first silicon substrate and the second silicon substrate, spikes, which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 14)
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9. A system of two silicon substrates, comprising:
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a first silicon substrate; a second silicon substrate; and a eutectic bonding layer made of aluminum-germanium or having aluminum-germanium as main component of aluminum-germanium, between the first silicon substrate and the second silicon substrate, spikes, which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface. - View Dependent Claims (10, 12)
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- 11. The system of claim 11, wherein the first silicon substrate is a wafer substrate, and the second silicon substrate is a sensor-wafer substrate.
Specification