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METHOD FOR BONDING TWO SILICON SUBSTRATES, AND A CORRESPONDEING SYSTEM OF TWO SILICON SUBSTRATES

  • US 20130161820A1
  • Filed: 12/19/2012
  • Published: 06/27/2013
  • Est. Priority Date: 12/22/2011
  • Status: Active Grant
First Claim
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1. A method for bonding two silicon substrates, the method comprising:

  • providing a first silicon substrate and a second silicon substrate;

    depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1% and 5% on a first bonding surface of the first silicon substrate;

    depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate;

    subsequently bonding the first silicon substrate and the second silicon substrate, so that the first bonding surface and the second bonding surface lie opposite each other; and

    implementing a thermal treatment step to form a eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as main component, between the first silicon substrate and the second silicon substrate, spikes, which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

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