POWER SWITCHING DRIVING APPARATUS, AND POWER FACTOR CORRECTION DEVICE AND POWER SUPPLY DEVICE HAVING THE SAME

• US 20130163289A1
• Filed: 02/27/2012
• Published: 06/27/2013
• Est. Priority Date: 12/23/2011
• Status: Abandoned Application

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: KIM, Myeung Su, CHO, Koon Shik, LEE, Jae Hyung, LEE, Kwang Mook
• Application Number:
  US13/405,791
• Publication Number:
  US 20130163289A1
• Time in Patent Office: Days
• US Class Current: 363/20
• CPC Class Codes: H02M 1/4225 using a non-isolated boost converter
• CPC Class Codes: H02M 3/335 using semiconductor devices only
• CPC Class Codes: H03K 17/0412 by measures taken in the control circuit
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
• CPC Class Codes: Y02P 80/10 Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier

Abstract

There are provided a power switching driving apparatus able to reduce a circuit area and increase a driving speed, and a power factor correction device and a power supply device having the same. The power switching driving apparatus includes: a first driving unit providing a switching signal in response to a control signal from the outside; a second driving unit including first and second NMOS FETs cascode-connected between an operational power source terminal supplying pre-set operation power and a ground, and performing switching complimentarily in response to the switching signal to provide a switching control signal controlling power switching; a current supply unit supplying a current for driving the second driving unit; and a voltage maintaining unit maintaining a voltage for driving the second driving unit.

Claims

1. A power switching driving apparatus comprising:

a first driving unit providing a switching signal in response to a control signal from the outside;

a second driving unit including a first N-type channel metal oxide semiconductor field effect transistor (NMOS FET) and a second NMOS FET cascode-connected between an operational power source terminal supplying pre-set operation power and a ground, and performing switching complimentarily in response to the switching signal to provide a switching control signal controlling power switching;

a current supply unit supplying a current required for driving the second driving unit; and

a voltage maintaining unit maintaining a voltage required for driving the second driving unit.

2. The apparatus of claim 1, wherein the first driving unit includes a switching element switched according to the control signal.

3. The apparatus of claim 2, wherein the second NMOS FET is switched on and off according to switching ON and OFF operation of the switching element and the first NMOS FET is complementarily switched on and off with the second NMOS FET to provide the switching control signal.

4. The apparatus of claim 3, wherein the current supply unit includes:

a current source supplying a pre-set current; and

a current mirror unit including first and second P-type channel metal oxide semiconductor field effect transistors (PMOS FETs) cascode-connected between the operational power source terminal and the current source and third and fourth PMOS FETs connected in parallel to the first and second PMOS FETs and cascode-connected between the operational power source terminal and the second NMOS FET, and mirroring a current from the current source to the second NMOS FET.

5. The apparatus of claim 4, wherein the voltage maintaining unit includes at least one Zener diode connected between a gate of the second NMOS FET and the ground.

6. The apparatus of claim 2, wherein the switching element is a switching NMOS FET.

7. A power factor correction device comprising:

a power factor correction unit correcting a power factor by switching rectified power in response to a switching control signal; and

a power switching driving apparatus including a first driving unit providing a switching signal in response to a control signal from the outside, and a second driving unit including a first NMOS FET and a second NMOS FET cascode-connected between an operational power source terminal supplying pre-set operation power and a ground, and performing switching complimentarily according to the switching signal to provide the switching control signal.

8. The device of claim 7, wherein the power switching driving apparatus further includes:

a current supply unit supplying a current required for driving the second driving unit; and

a voltage maintaining unit maintaining a voltage required for driving the second driving unit.

9. The device of claim 8, wherein the first driving unit includes a switching element switched according to the control signal.

10. The device of claim 9, wherein the second NMOS FET is switched on and off according to switching ON and OFF operation of the switching element, and the first NMOS FET is complementarily switched on and off with the second NMOS FET to provide the switching control signal.

11. The device of claim 10, wherein the current supply unit includes:

a current source supplying a pre-set current; and

a current mirror unit including first and second PMOS FETs cascode-connected between the operational power source terminal and the current source and third and fourth PMOS FETs connected in parallel to the first and second PMOS FETs and cascode-connected between the operational power source terminal and the second NMOS FET, and mirroring a current from the current source to the second NMOS FET.

12. The device of claim 11, wherein the voltage maintaining unit includes at least one Zener diode connected between a gate of the second NMOS FET and the ground.

13. The device of claim 9, wherein the switching element is a switching NMOS FET.

14. A power supply device comprising:

a power conversion unit switching input power in response to a switching control signal to output pre-set driving power; and

a power switching driving apparatus including a first driving unit providing a switching signal in response to a control signal from the outside, and a second driving unit including a first NMOS FET and a second NMOS FET cascode-connected between an operational power source terminal supplying pre-set operation power and a ground and performing switching complimentarily according to the switching signal to provide the switching control signal.

15. The device of claim 14, wherein the power switching driving apparatus further includes:

a current supply unit supplying a current required for driving the second driving unit; and

a voltage maintaining unit maintaining a voltage required for driving the second driving unit.

16. The device of claim 15, wherein the first driving unit includes a switching element switched according to the control signal.

17. The device of claim 16, wherein the second NMOS FET is switched on and off according to switching ON and OFF operation of the switching element, and the first NMOS FET is complementarily switched on and off with the second NMOS FET to provide the switching control signal.

18. The device of claim 17, wherein the current supply unit includes:

a current source supplying a pre-set current; and

a current mirror unit including first and second PMOS FETs cascode-connected between the operational power source terminal and the current source and third and fourth PMOS FETs connected in parallel to the first and second PMOS FETs and cascode-connected between the operational power source terminal and the second NMOS FET, and mirroring a current from the current source to the second NMOS FET.

19. The device of claim 18, wherein the voltage maintaining unit includes at least one Zener diode connected between a gate of the second NMOS FET and the ground.

20. The device of claim 14, further comprising a power factor correction unit switching rectified power, correcting a power factor thereof, and providing the same to the power conversion unit.

21. The device of claim 16, wherein the switching element is a switching NMOS FET.