×

READ/WRITE OPERATIONS IN SOLID-STATE STORAGE DEVICES

  • US 20130166994A1
  • Filed: 12/17/2012
  • Published: 06/27/2013
  • Est. Priority Date: 12/21/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method for reading and writing data in q-level cells of solid-state memory, where q>

  • 2, the method comprising;

    encoding input data into codewords having N qary symbols, wherein the symbols of each codeword satisfy a single-parity-check condition;

    writing each symbol in a respective cell of the solid state memory by setting the cell to a level dependent on the qary value of the symbol;

    reading memory cells to obtain read signals corresponding to respective codewords; and

    detecting the codewords corresponding to respective read signals by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×