READ/WRITE OPERATIONS IN SOLID-STATE STORAGE DEVICES
First Claim
1. A method for reading and writing data in q-level cells of solid-state memory, where q>
- 2, the method comprising;
encoding input data into codewords having N qary symbols, wherein the symbols of each codeword satisfy a single-parity-check condition;
writing each symbol in a respective cell of the solid state memory by setting the cell to a level dependent on the qary value of the symbol;
reading memory cells to obtain read signals corresponding to respective codewords; and
detecting the codewords corresponding to respective read signals by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation.
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Abstract
Methods and apparatus are provided for reading and writing data in q-level cells of solid-state memory, where q>2. Input data is encoded into codewords having N qary symbols, wherein the symbols of each codeword satisfy a single-parity-check condition. Each symbol is written in a respective cell of the solid state memory by setting the cell to a level dependent on the qary value of the symbol. Memory cells are read to obtain read signals corresponding to respective codewords. The codewords corresponding to respective read signals are detected by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation.
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Citations
16 Claims
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1. A method for reading and writing data in q-level cells of solid-state memory, where q>
- 2, the method comprising;
encoding input data into codewords having N qary symbols, wherein the symbols of each codeword satisfy a single-parity-check condition; writing each symbol in a respective cell of the solid state memory by setting the cell to a level dependent on the qary value of the symbol; reading memory cells to obtain read signals corresponding to respective codewords; and detecting the codewords corresponding to respective read signals by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- 2, the method comprising;
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16. An apparatus for reading and writing data in q-level cells of solid-state memory, where q>
- 2, the apparatus comprising;
an encoder for encoding input data into codewords having N qary symbols, wherein the symbols of each codeword satisfy a single-parity-check condition; a read/write controller for writing each symbol in a respective cell of the solid state memory by setting the cell to a level dependent on the qary value of the symbol, and for reading memory cells to obtain read signals corresponding to respective codewords; and a detector for detecting the codewords corresponding to respective read signals by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation.
- 2, the apparatus comprising;
Specification