SEMICONDUCTOR DEVICE

• US 20130168671A1
• Filed: 06/30/2011
• Published: 07/04/2013
• Est. Priority Date: 07/02/2010
• Status: Active Grant

• Current Assignee: Advanced Interconnect Materials, LLC
• Original Assignee: Advanced Interconnect Materials, LLC
• Inventors: Koike, Junichi, Yun, Pilsang, Kawakami, Hideaki
• Granted Patent: US 8,895,978 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/417 carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.

A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.

Claims

1. A semiconductor device comprising:

a semiconductor layer composed of an oxide semiconductor material containing indium;

an ohmic electrode provided on the semiconductor layer and having an ohmic contact with the semiconductor layer; and

an intermediate layer provided between the semiconductor layer and the ohmic electrode,

wherein the intermediate layer includes a first region whose indium atomic concentration is greater than that of an interior of the semiconductor layer and a second region whose indium atomic concentration is less than that of the first region.

2. The semiconductor device as recited in claim 1, wherein the first region is located in contact with the semiconductor layer and the second region is located in contact with the ohmic electrode.

3. The semiconductor device as recited in claim 1, wherein the first region is composed of crystal grains containing indium (In).

4. The semiconductor device as recited in claim 1, wherein the second region is composed of amorphous material.

5. The semiconductor device as recited in claim 1, wherein the thickness of the intermediate layer where the first region and the second region meet is 3 nm or more and 30 nm or less.

6. The semiconductor device as recited in claim 1, wherein the first and second regions are constituted to contain an oxide of a metal forming the ohmic electrode.

7. The semiconductor device as recited in claim 6, wherein the metal forming the ohmic electrode is a metal with a free energy of oxide formation of a lower value than indium.

8. The semiconductor device as recited in claim 6, wherein the metal forming the ohmic electrode contains at least one among manganese (Mn), molybdenum (Mo), and titanium (Ti).

9. The semiconductor device as recited in claim 8, wherein the metal forming the ohmic electrode contains manganese.

10. The semiconductor device as recited in claim 9, wherein an electrovalence of the manganese increases from the second region toward the first region.

11. The semiconductor device as recited in claim 9, wherein an atomic concentration of the manganese exhibits maximum value in the second region and is lower in the first region than in the second region.

12. The semiconductor device as recited in claim 8, wherein the metal forming the ohmic electrode contains titanium.

13. The semiconductor device as recited in claim 12, wherein the electrovalence of the titanium increases from the second region toward the first region.

14. The semiconductor device as recited in claim 1, wherein oxygen concentrations of the first and second regions are lower than an oxygen concentration of the semiconductor layer.

15. The semiconductor device recited in claim 1, wherein the ohmic electrode is formed of a copper alloy whose main constituent element is copper.

16. The semiconductor device as recited in claim 15, wherein the second region contains more copper than the first region.

17. The semiconductor device as recited in claim 2, wherein the first region is composed of crystal grains containing indium (In).