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THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

  • US 20130175521A1
  • Filed: 05/23/2011
  • Published: 07/11/2013
  • Est. Priority Date: 06/01/2010
  • Status: Active Grant
First Claim
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1. A thin film transistor provided on a substrate, comprising:

  • a gate electrode;

    a gate insulating film covered by the gate electrode;

    a semiconductor layer placed to face the gate electrode with the gate insulating film interposed therebetween;

    a source electrode connected to the semiconductor layer; and

    a drain electrode separated from the source electrode and connected to the semiconductor layer, wherein the semiconductor layer is comprised of a metal oxide semiconductor including an oxide of at least one of In, Ga, or Zn, and has a source portion that contacts the source electrode, a drain electrode that contacts the drain electrode, and a channel portion that is located between the source and drain portions,a reduced region is formed at least in the channel portion of the semiconductor layer, and the reduced region has a higher content of a simple substance of In than a remaining portion of the semiconductor layer, andthe reduced region extends substantially in the entire channel portion.

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