SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a first electrode;
a second electrode;
a first semiconductor film over the first electrode;
a second semiconductor film over the second electrode;
an oxide semiconductor film over the first semiconductor film and the second semiconductor film;
an insulating film over the oxide semiconductor film; and
a gate electrode over the insulating film,wherein the oxide semiconductor film comprises indium and zinc, andwherein the first semiconductor film and the second semiconductor film each have smaller thickness than the oxide semiconductor film.
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Accused Products
Abstract
One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a first electrode; a second electrode; a first semiconductor film over the first electrode; a second semiconductor film over the second electrode; an oxide semiconductor film over the first semiconductor film and the second semiconductor film; an insulating film over the oxide semiconductor film; and a gate electrode over the insulating film, wherein the oxide semiconductor film comprises indium and zinc, and wherein the first semiconductor film and the second semiconductor film each have smaller thickness than the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a first electrode; a second electrode; a first semiconductor film over the first electrode; a second semiconductor film over the second electrode; an oxide semiconductor film over the first semiconductor film and the second semiconductor film; a first insulating film over the oxide semiconductor film; a gate electrode over the first insulating film; a second insulating film over the gate electrode; and a pixel electrode over the second insulating film and electrically connected to the first electrode or the second electrode, wherein the oxide semiconductor film comprises indium and zinc, and wherein the first semiconductor film and the second semiconductor film each have smaller thickness than the oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification