SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an insulator over and in contact with a part of an insulating surface;
an oxide semiconductor film over and in contact with the insulator and the insulating surface;
a gate insulating film over and in contact with the oxide semiconductor film and the insulating surface; and
a gate electrode over and in contact with the gate insulating film,wherein the gate electrode extends beyond the oxide semiconductor film and the insulator.
1 Assignment
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Accused Products
Abstract
Provided is a fin-type transistor having an oxide semiconductor in a channel formation region in which the channel formation region comprising an oxide semiconductor is three-dimensionally structured and a gate electrode is arranged to extend over the channel formation region. Specifically, the fin-type transistor comprises: an insulator protruding from a substrate plane; an oxide semiconductor film extending beyond the insulator; a gate insulating film over the oxide semiconductor film; and a gate electrode over and extending beyond the oxide semiconductor film. This structure allows the expansion of the width of the channel formation region, which enables the miniaturization and high integration of a semiconductor device having the transistor. Additionally, the extremely small off-state current of the transistor contributes to the formation of a semiconductor device with significantly reduced power consumption.
40 Citations
18 Claims
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1. A semiconductor device comprising:
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an insulator over and in contact with a part of an insulating surface; an oxide semiconductor film over and in contact with the insulator and the insulating surface; a gate insulating film over and in contact with the oxide semiconductor film and the insulating surface; and a gate electrode over and in contact with the gate insulating film, wherein the gate electrode extends beyond the oxide semiconductor film and the insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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an insulator over and in contact with a part of an insulating surface; an oxide semiconductor film over and in contact with the insulator and the insulating surface; a source electrode and a drain electrode which overlap with a part of the oxide semiconductor film, the source electrode and the drain electrode being in contact with the insulating surface, the insulator, and the part of the oxide semiconductor film; a gate insulating film over and in contact with the oxide semiconductor film, the insulating surface, the source electrode, and the drain electrode; and a gate electrode over and in contact with the gate insulating film, wherein the gate electrode extends beyond the oxide semiconductor film and the insulator. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor device comprising:
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an insulator over and in contact with a part of an insulating surface; a source electrode and a drain electrode over and in contact with the insulator and the insulating surface; an oxide semiconductor film over and in contact with the insulating surface, the insulator, the source electrode, and the drain electrode; a gate insulating film over and in contact with the insulating surface, the source electrode, the drain electrode, and the oxide semiconductor film; and a gate electrode over and in contact with the gate insulating film, wherein the gate electrode extends beyond the oxide semiconductor film and the insulator. - View Dependent Claims (15, 16, 17, 18)
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Specification