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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20130175530A1
  • Filed: 01/03/2013
  • Published: 07/11/2013
  • Est. Priority Date: 01/10/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulator over and in contact with a part of an insulating surface;

    an oxide semiconductor film over and in contact with the insulator and the insulating surface;

    a gate insulating film over and in contact with the oxide semiconductor film and the insulating surface; and

    a gate electrode over and in contact with the gate insulating film,wherein the gate electrode extends beyond the oxide semiconductor film and the insulator.

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